Datasheet > BCP8050-C

BCP8050-C

更新时间： 2024-11-12 01:14:55

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
2页	421K
描述
1.5A, 40V NPN Epitaxial Planar Transistor

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BCP8050-C 数据手册

BCP8050

1.5A, 40V

NPN Epitaxial Planar Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

SOT-89

The BCP8050 is suited for the output stage of audio,

voltage regulator, and relay driver.

MARKING

CLASSIFICATION OF h_FE

BCP8050-C

BCP8050-D

160~300

Product Rank

Range

120~200

Collector

Millimeter

PACKAGE INFORMATION

REF.

Min.

Max.

4.60

4.25

1.60

2.60

Min.

Max.

4.40

3.94

1.40

2.30

0.40

0.58

Package

MPQ

Leader Size

1.50 TYP

3.00 TYP

Base

0.32

0.35

0.52

0.44

SOT-89

7’ inch

1.50

0.89

1.70

1.2

Emitter

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

Unit

Parameter

Symbol

Ratings

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Total Power Dissipation

Junction & Storage temperature

V_CBO

V_CEO

V_EBO

I_C

P_D

T_J, T_STG

1.5

0.5

°C

150, -55~150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Min.

120

Typ.

Max.

Unit

Test Conditions

I_C=100µA, I_E=0

I_C=0.1mA, I_B=0

I_E=100µA, I_C=0

V_CB=40V, I_E=0

V_CE=20V, I_E=0

V_EB=5V, I_C=0

V_CE=1V, I_C= 0.1A

V_CE=1V, I_C= 0.8A

I_C=800mA, I_B=80mA

V_CE=1V, I_C=10mA

I_B=1A

Collector-base breakdown voltage

Collector-emitter breakdown

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

0.1

300

0.5

1.2

µA

I_CEO

I_EBO

DC current gain

h_FE

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

Base-emitter positive favor voltage

Transition frequency

V_CE(sat)

V_BE(sat)

V_BE

V_BEF

f _T

1.55

100

MHz V_CE=10V, I_C=50mA, f=30MHz

pF V_CB=10V, I_E=0, f=1MHz

Output Capacitance

C_OB

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

23-Sep-2014 Rev. B

Page 1 of 2

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