Datasheet > BCP882

BCP882

更新时间： 2022-10-15 10:03:27

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	352K
描述
Epitaxial Planar Transistor

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BCP882 数据手册

BCP882

NPN Silicon

Elektronische Bauelemente

Epitaxial Planar Transistor

RoHS Compliant Product

SOT-89

Description

The BCP882 is suited for the output stage of 1.5W

audio, voltage regulator, and relay driver.

Millimeter

Min. Max.

3.00 REF.

REF.

Min.

4.4

Max.

4.6

4.05

1.50

1.30

2.40

0.89

4.25

1.70

1.50

2.60

1.20

1.50 REF.

0.40

1.40

0.35

0.52

1.60

0.41

5q TYP.

0.70 REF.

Absolute Maximum Ratings at TA=25^oC

Symbol

Parameter

Value

Units

V_CBO

Collector-Base Voltage

V^CEO

V^EBO

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Total Power Dissipation

1.2

Storage Temperature

Junction and

TJ,

-55~+150

Tstg

ELECTRICAL CHARACTERISTICS Tamb=25

unless otherwise specified

Typ.

Uni

Parameter

Collector-Base Breakdown Voltage

Symbol

BVCBO

BVCEO

BVEBO

Min

Max

Test Conditions

IC=100µA,IE=0

IC= 1mA,IB=0

IE= 10µA

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Base Cutoff Current

ICBO

VCB= 30V

Emitter-Base Cutoff Current

Collector Saturation Voltage

IEBO

VEB=3V

VCE(sat)

IC=2A,IB=0.2A

0.5

Base-Emitter Saturation Voltage

DC Current Gain

VBE(sat)

hFE1

100

IC=2A,IB=0.2A

VCE= 2V, IC=20mA

VCE= 2V, IC=1A

hFE2

500

Gain-Bandwidth Product

Output Capacitance

VCE= 5V, IC= 0.1A,f=100MHz

VCB=10V, f=1MHz,IE=0

Cob

Classification of hFE

Rank

100~200

Range

160~320

250~500

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 2

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