Datasheet > BCPA14

BCPA14

更新时间： 2022-10-15 10:03:31

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	361K
描述
Epitaxial Planar Transistor

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BCPA14 数据手册

BCPA14

NPN Silicon

Elektronische Bauelemente

Epitaxial Planar Transistor

RoHS Compliant Product

SOT-89

Description

The BCPA14 is a Darlington amplifier transistor designed

for applications requiring exremely high current gain.

Millimeter

Min. Max.

3.00 REF.

REF.

Min.

4.4

Max.

4.6

4.05

1.50

1.30

2.40

0.89

4.25

1.70

1.50

2.60

1.20

1.50 REF.

0.40

1.40

0.35

0.52

1.60

0.41

5q TYP.

0.70 REF.

Absolute Maximum Ratings at TA=25^oC

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

VCBO

VCEO

VEBO

Collector to Emitter Voltage

Emitter to Base Voltage

Collect Current

500

1.0

Total Power Dissipation

^oC

-55~+150

Tj, Tstg

Operating Junction and Storage Temperature Range

ELECTRICAL CHARACTERISTICS (Tamb=25^oC)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Symbol

Min. Typ. Max. Unit

Test Conditions

IC=100uA, IE=0

I^C= 100uA, IB =0

I^E=10uA, IC=0

BV_CBO

BV_CEO

BV_EBO

ICBO

VCB=30V, IE=0

100

Collector Cut-off Current

VEB=10V, IC=0

ICEO

Collector Output Capacitance

Collector-Emitter Saturation Voltage

Base-Emitter Voltage, On

DC Current Gain

Cob

*VCE(sat)

*VBE(on)

*hFE1

*hFE2

1.5

2.0

V^CB=10V,f=1MHz,IE=0

I^C=100mA, IB =0.1mA

V^CE=5V, IC=100mA

V^CE=5V, IC=10mA

10K

20K

125

V^CE=5V, IC=100mA

MHz

Transition Frequency

V^CE=5V, I =10mA, f=100MHz

*Pulse Test: Pulse Width≦380us, Duty Cycle 2%

≦

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 2

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