Datasheet > BCPA94

BCPA94

更新时间： 2024-01-14 08:58:38

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	219K
描述
PNP Silicon Epitaxial Planar Transistor

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中文翻译

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数据手册

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BCPA94 数据手册

BCPA94

-0.5 A, -400 V

PNP Silicon Epitaxial Planar Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

The BCPA94 is designed for application requires high voltage.

SOT-89

FEATURES

 High Voltage：V_CEO=400V (min) at I_C=1mA

 High Current gain：I_C=300mA at 25°C

 Complementary with BCPA44

MARKING

A94





Date Code

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

Unit

Parameter

Symbol

Ratings

-400

Collector-Base Voltage

V_CBO

V_CEO

V_EBO

I_C

Collector-Emitter Voltage

Emitter-Base Voltage

-400

-6

Collector Current (DC)

-0.5

Total Power Dissipation

Junction & Storage Temperature

P_D

°C

T_J, T_STG

150, -55~150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

-400

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C= -100A, I_E=0

I_C= -1mA, I_B=0

-400

-6

I_E= -100A, I_C=0

V_CB= -400V, I_E=0

-100

-500

-100

Collector-emitter current

I_CES

V_CE= -400V, V_BE=0

V_EB= -6V, I_C=0

Emitter cut-off current

I_EBO

h_FE1

V_CE= -10V, I_C= -1mA

V_CE= -10V, I_C= -10mA

V_CE= -10V, I_C= -50mA

V_CE= -10V, I_C= -100mA

I_C= -1mA, I_B= -0.1mA

I_C= -10mA, I_B= -1mA

I_C= -50mA, I_B= -5mA

I_C= -10mA, I_B= -1mA

h_FE2

300

DC current gain *

h_FE3

h_FE4

V_CE(sat)1

V_CE(sat)2

V_CE(sat)3

V_BE(sat)

-350

-500

-750

Collector-emitter saturation voltage *

Base-emitter saturation voltage *

* Pulse Test: Pulse Width ≦ 380μs, Duty Cycle≦2%

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

11-Jun-2010 Rev. B

Page 1 of 2

中文翻译

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