BCPA1666
-2 A, -50 V
PNP Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-89
FEATURES
4
ꢀ
ꢀ
ꢀ
Small Flat Package
Low Saturation Voltage
Power Amplifier and Switching Application
1
2
3
B
A
E
C
E
C
PACKAGE INFORMATION
Package
MPQ
Leader Size
B
D
K
SOT-89
1K
7’ inch
F
G
H
Collector
24
J
L
CLASSIFICATION OF hFE1
Millimeter
Millimeter
REF.
REF.
Min.
Max.
4.60
4.25
1.60
2.60
Min.
Max.
Product
BCPA1666-O
BCPA1666-Y
120~240
WY
A
B
C
D
4.40
3.94
1.40
2.30
G
H
J
0.40
0.58
1
Base
1.50 TYP
3.00 TYP
70~140
WO
Range
K
0.32
0.35
0.52
0.44
3
Emitter
E
F
1.50
0.89
1.70
1.20
L
Marking
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
-50
Collector-Emitter Voltage
Emitter-Base Voltage
-50
V
-5
V
Collector Current -Continuous
Collector Power Dissipation
Maximum Junction to Ambient
Junction & Storage Temperature
-2
0.5
A
PC
W
RθJA
250
°C / W
TJ, TSTG
150, -55~150
°C
PNP ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Min.
-50
Typ.
Max.
Unit
V
Test Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
-
-
-
IC= -1mA, IE=0
-50
-
V
IC= -10mA, IB=0
IE= -1mA, IC=0
-5
-
-
-
V
-
-100
-100
240
-
nA
nA
VCB= -50V, IE=0
VEB= -5 V, IC=0
Emitter cut-off current
IEBO
-
70
40
-
-
hFE1
-
VCE= -2V, IC= -500mA
VCE= -2V, IC= -1.5A
IC= -1A, IB= -50mA
DC current gain1
hFE2
-
Collector-emitter saturation voltage1
Base-emitter saturation voltage1
Transition frequency
VCE(sat)
VBE(sat)
f T
-
-0.5
-1.2
-
V
V
-
-
120
-
IC= -1A, IB= -50mA
VCE= -2V, IC= -500mA,
-
MHz
pF
Output Capacitance
Note:
COB
-
40
VCB= -10V, IE=0, f=1MHz
1. Pulse test: pulse width ≤300mS, duty cycle≤ 2.0%.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
25-Oct-2012 Rev. A
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