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BCPA1666-Y PDF预览

BCPA1666-Y

更新时间: 2022-02-26 11:31:20
品牌 Logo 应用领域
SECOS /
页数 文件大小 规格书
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描述
PNP Plastic Encapsulated Transistor

BCPA1666-Y 数据手册

  
BCPA1666  
-2 A, -50 V  
PNP Plastic Encapsulated Transistor  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
SOT-89  
FEATURES  
4
Small Flat Package  
Low Saturation Voltage  
Power Amplifier and Switching Application  
1
2
3
B
A
E
C
E
C
PACKAGE INFORMATION  
Package  
MPQ  
Leader Size  
B
D
K
SOT-89  
1K  
7’ inch  
F
G
H
Collector  
24  
J
L
CLASSIFICATION OF hFE1  
Millimeter  
Millimeter  
REF.  
REF.  
Min.  
Max.  
4.60  
4.25  
1.60  
2.60  
Min.  
Max.  
Product  
BCPA1666-O  
BCPA1666-Y  
120~240  
WY  
A
B
C
D
4.40  
3.94  
1.40  
2.30  
G
H
J
0.40  
0.58  
1
Base  
1.50 TYP  
3.00 TYP  
70~140  
WO  
Range  
K
0.32  
0.35  
0.52  
0.44  
3
Emitter  
E
F
1.50  
0.89  
1.70  
1.20  
L
Marking  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)  
Parameter  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
-50  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-50  
V
-5  
V
Collector Current -Continuous  
Collector Power Dissipation  
Maximum Junction to Ambient  
Junction & Storage Temperature  
-2  
0.5  
A
PC  
W
RθJA  
250  
°C / W  
TJ, TSTG  
150, -55~150  
°C  
PNP ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Min.  
-50  
Typ.  
Max.  
Unit  
V
Test Conditions  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
-
-
-
IC= -1mA, IE=0  
-50  
-
V
IC= -10mA, IB=0  
IE= -1mA, IC=0  
-5  
-
-
-
V
-
-100  
-100  
240  
-
nA  
nA  
VCB= -50V, IE=0  
VEB= -5 V, IC=0  
Emitter cut-off current  
IEBO  
-
70  
40  
-
-
hFE1  
-
VCE= -2V, IC= -500mA  
VCE= -2V, IC= -1.5A  
IC= -1A, IB= -50mA  
DC current gain1  
hFE2  
-
Collector-emitter saturation voltage1  
Base-emitter saturation voltage1  
Transition frequency  
VCE(sat)  
VBE(sat)  
f T  
-
-0.5  
-1.2  
-
V
V
-
-
120  
-
IC= -1A, IB= -50mA  
VCE= -2V, IC= -500mA,  
-
MHz  
pF  
Output Capacitance  
Note:  
COB  
-
40  
VCB= -10V, IE=0, f=1MHz  
1. Pulse test: pulse width 300mS, duty cycle2.0%.  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
25-Oct-2012 Rev. A  
Page 1 of 1  

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