Datasheet > BCP869

BCP869

更新时间： 2024-11-11 08:50:15

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	60K
描述
Plastic Encapsulated Transistor

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BCP869 数据手册

BCP869

PNP

Plastic Encapsulated Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

The BCP869 is designed for application required for high current (maximum -1 A) and low voltage (maximum -20 V).

PACKAGE DIMENSIONS

SOT-89

Millimeter

Min. Max.

3.00 REF.

1.50 REF.

REF.

Min.

Max.

4.60

4.25

1.70

1.50

2.60

1.20

4.40

4.05

1.50

1.30

2.40

0.89

0.40

1.40

0.35

0.52

1.60

0.41

5° TYP.

0.70 REF.

ABSOLUTE MAXIMUM RATINGS at Ta = 25°C

Unit

Parameter

Symbol

Ratings

Collector-Base Voltage

V_CBO

V_CEO

V_EBO

I_C

-32

Collector-Emitter Voltage

Emitter-Base Voltage

-20

-5

Collector Current -Continuous

Collector Dissipation

-1

0.5

P_C

°C

Junction & Storage temperature

T_J, T_STG

150, -55~150

PNP ELECTRICAL CHARACTERISTICS at Ta = 25°C

Parameter

Symbol

Min.

Max.

Unit

Test Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

-32

-20

-5

I_C=-0.1mA, I_E=0

I_C= -1mA, I_B=0

I_E=-0.1mA, I_C=0

-0.1

μA

V_CB=-25V, I_E=0

Emitter cut-off current

I_EBO

V_EB=-5 V, I_C=0

h_FE(1)

h_FE(2)

h_FE(3)

VBE

100

V_CE=-10V, I_C= -5mA

V_CE=-1V, I_C= -500mA

V_CE=-1V, I_C= -1A

DC current gain

375

Base-emitter voltage

-1

V_CE=-1V, I_C= -1A

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f _T

-0.5

I_C=-1A, I_B= -100mA

V_CE=-5V, I_C=-10mA, f = 100MHz

MHz

CLASSIFICATION OF hFE2

Rank

BC869

BC869-16

BC869-25

Range

100 – 375

100 - 250

160 – 375

Marking

CEC

CGC

CHC

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

01-June-2004 Rev. A

Page 1 of 2

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