Datasheet > BCP869

BCP869

更新时间： 2022-10-12 16:52:42

品牌	Logo	应用领域
永而佳 - WINNERJOIN		/
页数	文件大小	规格书
1页	132K
描述
TRANSISTOR (PNP)

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数据手册

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BCP869 数据手册

RoHS

BCP869

BC869

TRANSISTOR (PNP)

SOT-89

FEATURES

1. BASE

Power dissipation

P_CM:

Collector current

I_CM:

Collector-base voltage

V_(BR)CBO:

500

-2

mW (Tamb=25℃)

2. COLLECTOR

3. EMITTER

-32

Operating and storage junction temperature range

T_J, T_stg: -65℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic=-0.1mA, I_E=0

I_C= -1mA , I_B=0

I_E=-0.1mA, I_C=0

V_CB=-25V, I_E=0

V_EB=-5V, I_C=0

MIN

-32

-20

-5

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

-0.1

µA

I_EBO

Emitter cut-off current

_CE=-10V, I_C= -5mA

100

h_FE(1)

V_CE=-1V, I_C= -500mA

V_CE=-1V, I_C= -1A

375

DC current gain

100

160

250

375

BC869-16

BC869-25

h_FE(2)

V_CE=-1V, I_C= -500mA

V_CE(sat)

I_C=-1A, I_B= -100mA

0.5

Collector-emitter saturation voltage

V_CE=-5V, I_C=-10mA

f = 100MHz

MHz

Transition frequency

f _T

WEJ ELECTRONIC CO.,LTD

DEVICE MARKING

BC869=CEC BC869-16=CGC BC869-25=CHC

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

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