5秒后页面跳转
捷配首页

Datasheet > 暂无类别数据> BCP69T1G
BCP69T1G PDF预览

BCP69T1G

更新时间： 2024-11-11 12:49:59
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
4页 101K
描述
PNP Silicon Epitaxial Transistor

阅读下载

中文翻译

获取价格

BCP69T1G 数据手册

 浏览型号BCP69T1G的Datasheet PDF文件第2页浏览型号BCP69T1G的Datasheet PDF文件第3页浏览型号BCP69T1G的Datasheet PDF文件第4页 
BCP69T1  
PNP Silicon  
Epitaxial Transistor  
This PNP Silicon Epitaxial Transistor is designed for use in low  
voltage, high current applications. The device is housed in the  
SOT−223 package, which is designed for medium power surface  
mount applications.  
http://onsemi.com  
Features  
MEDIUM POWER  
PNP SILICON  
HIGH CURRENT  
TRANSISTOR  
• High Current: I = −1.0 A  
• The SOT−223 Package can be soldered using wave or reflow.  
• SOT−223 package ensures level mounting, resulting in improved  
thermal conduction, and allows visual inspection of soldered joints.  
The formed leads absorb thermal stress during soldering, eliminating  
the possibility of damage to the die.  
C
SURFACE MOUNT  
• NPN Complement is BCP68  
• Pb−Free Package is Available  
COLLECTOR 2,4  
BASE  
1
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Collector Current  
Symbol Value  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
EMITTER 3  
V
V
V
−20  
−25  
−5.0  
−1.0  
CEO  
CBO  
EBO  
MARKING  
DIAGRAM  
4
I
C
1
2
Total Power Dissipation @ T = 25°C (Note 1)  
Derate above 25°C  
P
D
1.5  
12  
W
mW/°C  
A
AYW  
CEG  
3
SOT−223 (TO−261)  
CASE 318E  
G
Operating and Storage Temperature Range  
T , T  
−65 to  
150  
°C  
J
stg  
STYLE 1  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
CE = Specific Device Code  
A
Y
W
G
= Assembly Location  
= Year  
= Work Week  
Thermal Resistance − Junction−to−Ambient  
R
83.3  
°C/W  
q
JA  
(Surface Mounted)  
Lead Temperature for Soldering,  
0.0625 in from case  
Time in Solder Bath  
T
260  
10  
°C  
= Pb−Free Package  
L
(Note: Microdot may be in either location)  
Sec  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.  
x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
BCP69T1  
SOT−223  
1000 / Tape & Reel  
1000 / Tape & Reel  
BCP69T1G  
SOT−223  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
October, 2008 − Rev. 8  
BCP69T1/D  
 
1234

中文翻译

下载PDF

BCP69T1G 替代型号

型号 品牌 替代类型 描述 数据表
BCP69T/R NXP

类似代替

 TRANSISTOR 1 A, 20 V, PNP, Si, POWER TRANSISTOR, PLASTIC, SMD, SC-73, 4 PIN, BIP General P
BCP69-25T/R NXP

类似代替

 TRANSISTOR 1 A, 20 V, PNP, Si, POWER TRANSISTOR, PLASTIC, SMD, SC-73, 4 PIN, BIP General P

与BCP69T1G相关器件

型号 品牌 获取价格 描述 数据表
BCP69T3 MOTOROLA

获取价格

 		1A, 25V, PNP, Si, POWER TRANSISTOR, TO-261AA
BCP69T3 ONSEMI

获取价格

 		1A, 20V, PNP, Si, POWER TRANSISTOR, TO-261AA, CASE 318E-04, TO-261, 4 PIN
BCP69TA ZETEX

获取价格

 		Power Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4
BCP69TA DIODES

获取价格

 		Power Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4
BCP69-TAPE-7 NXP

获取价格

 		TRANSISTOR 1 A, 20 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power
BCP69TC DIODES

获取价格

 		Power Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4
BCP69TRL YAGEO

获取价格

 		Power Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4
BCP69TRL NXP

获取价格

 		TRANSISTOR 1 A, 20 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power
BCP69TRL13 NXP

获取价格

 		TRANSISTOR 0.025 A, 30 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power
BCP69TRL13 YAGEO

获取价格

 		Power Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4

与BCP69T1G相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证