是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | SC-73 | 包装说明: | PLASTIC, SMD, SC-73, 4 PIN |
针数: | 4 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 1 A |
集电极-发射极最大电压: | 20 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 60 | JESD-30 代码: | R-PDSO-G4 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 4 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 功耗环境最大值: | 1.5 W |
最大功率耗散 (Abs): | 1.5 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | TIN | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 40 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
BCP69-25T/R | NXP |
完全替代 |
TRANSISTOR 1 A, 20 V, PNP, Si, POWER TRANSISTOR, PLASTIC, SMD, SC-73, 4 PIN, BIP General P | |
BCP69T1G | ONSEMI |
类似代替 |
PNP Silicon Epitaxial Transistor |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCP69T1 | ONSEMI |
获取价格 |
MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT | |
BCP69T1 | MOTOROLA |
获取价格 |
MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT | |
BCP69T1/D | ETC |
获取价格 |
PNP Epitaxial Transistor | |
BCP69T1G | ONSEMI |
获取价格 |
PNP Silicon Epitaxial Transistor | |
BCP69T3 | MOTOROLA |
获取价格 |
1A, 25V, PNP, Si, POWER TRANSISTOR, TO-261AA | |
BCP69T3 | ONSEMI |
获取价格 |
1A, 20V, PNP, Si, POWER TRANSISTOR, TO-261AA, CASE 318E-04, TO-261, 4 PIN | |
BCP69TA | ZETEX |
获取价格 |
Power Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 | |
BCP69TA | DIODES |
获取价格 |
Power Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 | |
BCP69-TAPE-7 | NXP |
获取价格 |
TRANSISTOR 1 A, 20 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power | |
BCP69TC | DIODES |
获取价格 |
Power Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 |