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BCP69T/R PDF预览

BCP69T/R

更新时间: 2024-11-11 21:14:27
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
13页 86K
描述
TRANSISTOR 1 A, 20 V, PNP, Si, POWER TRANSISTOR, PLASTIC, SMD, SC-73, 4 PIN, BIP General Purpose Power

BCP69T/R 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SC-73包装说明:PLASTIC, SMD, SC-73, 4 PIN
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5
外壳连接:COLLECTOR最大集电极电流 (IC):1 A
集电极-发射极最大电压:20 V配置:SINGLE
最小直流电流增益 (hFE):60JESD-30 代码:R-PDSO-G4
JESD-609代码:e3元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP功耗环境最大值:1.5 W
最大功率耗散 (Abs):1.5 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):40 MHzBase Number Matches:1

BCP69T/R 数据手册

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BCP69  
20 V, 1 A PNP medium power transistor  
Rev. 06 — 2 December 2008  
Product data sheet  
1. Product profile  
1.1 General description  
PNP medium power transistor in a Surface-Mounted Device (SMD) plastic package.  
Table 1.  
Product overview  
Type number[1]  
Package  
NXP  
Package  
configuration  
JEITA  
BCP69  
SOT223  
SC-73  
medium power  
BCP69-16  
BCP69-16/DG  
BCP69-16/IN  
BCP69-25  
[1] /DG: halogen-free  
1.2 Features  
I High current  
I Three current gain selections  
I 1.4 W total power dissipation  
I Medium power SMD plastic package  
1.3 Applications  
I Linear voltage regulators  
I High-side switches  
I Supply line switches  
I MOSFET drivers  
I Audio preamplifier  
1.4 Quick reference data  
Table 2.  
Quick reference data  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
20  
1  
Unit  
V
VCEO  
IC  
collector-emitter voltage open base  
collector current  
-
-
-
-
-
-
A
ICM  
peak collector current  
single pulse;  
tp 1 ms  
2  
A
 
 
 
 
 
 
 

BCP69T/R 替代型号

型号 品牌 替代类型 描述 数据表
BCP69-25T/R NXP

完全替代

TRANSISTOR 1 A, 20 V, PNP, Si, POWER TRANSISTOR, PLASTIC, SMD, SC-73, 4 PIN, BIP General P
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