生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.57 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 1 A | 集电极-发射极最大电压: | 25 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 60 |
JEDEC-95代码: | TO-261AA | JESD-30 代码: | R-PDSO-G4 |
元件数量: | 1 | 端子数量: | 4 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | PNP | 功耗环境最大值: | 1.5 W |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 60 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
BCP69TA | ZETEX | Power Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 |
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BCP69TA | DIODES | Power Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 |
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BCP69-TAPE-7 | NXP | TRANSISTOR 1 A, 20 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power |
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BCP69TC | DIODES | Power Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 |
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BCP69TRL | YAGEO | Power Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 |
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BCP69TRL | NXP | TRANSISTOR 1 A, 20 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power |
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