5秒后页面跳转
BCP56T1 PDF预览

BCP56T1

更新时间: 2024-11-04 22:48:15
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管功率双极晶体管光电二极管放大器
页数 文件大小 规格书
6页 203K
描述
MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT

BCP56T1 技术参数

生命周期:Transferred零件包装代码:TO-261AA
包装说明:SMALL OUTLINE, R-PDSO-G4针数:4
Reach Compliance Code:unknown风险等级:5.58
外壳连接:COLLECTOR最大集电极电流 (IC):1 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):40JEDEC-95代码:TO-261AA
JESD-30 代码:R-PDSO-G4JESD-609代码:e0
元件数量:1端子数量:4
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN功耗环境最大值:1.5 W
最大功率耗散 (Abs):1.5 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):130 MHz
Base Number Matches:1

BCP56T1 数据手册

 浏览型号BCP56T1的Datasheet PDF文件第2页浏览型号BCP56T1的Datasheet PDF文件第3页浏览型号BCP56T1的Datasheet PDF文件第4页浏览型号BCP56T1的Datasheet PDF文件第5页浏览型号BCP56T1的Datasheet PDF文件第6页 
Order this document  
by BCP56T1/D  
SEMICONDUCTOR TECHNICAL DATA  
Motorola Preferred Device  
These NPN Silicon Epitaxial transistors are designed for use in audio amplifier  
applications. The device is housed in the SOT-223 package, which is designed for  
medium power surface mount applications.  
MEDIUM POWER  
NPN SILICON  
High Current: 1.0 Amp  
HIGH CURRENT  
TRANSISTOR  
SURFACE MOUNT  
The SOT-223 package can be soldered using wave or reflow. The formed leads  
absorb thermal stress during soldering, eliminating the possibility of damage to  
the die  
Available in 12 mm Tape and Reel  
Use BCP56T1 to order the 7 inch/1000 unit reel  
Use BCP56T3 to order the 13 inch/4000 unit reel  
4
COLLECTOR 2,4  
PNP Complement is BCP53T1  
1
2
3
BASE  
1
CASE 318E-04, STYLE 1  
TO-261AA  
EMITTER 3  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Symbol  
Value  
80  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
V
CBO  
V
EBO  
100  
5
Emitter-Base Voltage  
Collector Current  
I
C
1
(1)  
Total Power Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
Watts  
mW/°C  
A
Operating and Storage Temperature Range  
DEVICE MARKING  
T , T  
65 to 150  
°C  
J
stg  
BCP56T1 = BH  
BCP56-10T1 = BK  
BCP56-16T1 = BL  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance  
Junction-to-Ambient (surface mounted)  
R
83.3  
°C/W  
θJA  
Maximum Temperature for Soldering Purposes  
Time in Solder Bath  
T
L
260  
10  
°C  
Sec  
1. Device mounted on a FR-4 glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.0625 in.; mounting pad for the collector lead = 0.93 sq. in.  
Thermal Clad is a trademark of the Bergquist Company  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
Motorola, Inc. 1996  

与BCP56T1相关器件

型号 品牌 获取价格 描述 数据表
BCP56T1/D ETC

获取价格

NPN Silicon Epitaxial Transistor
BCP56T1G ONSEMI

获取价格

NPN Silicon Epitaxial Transistor
BCP56T1SERIES MOTOROLA

获取价格

MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT
BCP56T3 ONSEMI

获取价格

NPN Silicon Epitaxial Transistor
BCP56T3G ONSEMI

获取价格

NPN Silicon Epitaxial Transistor
BCP56TA DIODES

获取价格

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223
BCP56-TAPE-13 NXP

获取价格

TRANSISTOR 1 A, 80 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power
BCP56-TAPE-7 NXP

获取价格

TRANSISTOR 1 A, 80 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power
BCP56TC DIODES

获取价格

Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4
BCP56TF ETC

获取价格

BCP56T/SOT223/SC-73