生命周期: | Transferred | 零件包装代码: | TO-261AA |
包装说明: | SMALL OUTLINE, R-PDSO-G4 | 针数: | 4 |
Reach Compliance Code: | unknown | 风险等级: | 5.58 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 1 A |
集电极-发射极最大电压: | 80 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 40 | JEDEC-95代码: | TO-261AA |
JESD-30 代码: | R-PDSO-G4 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 4 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 功耗环境最大值: | 1.5 W |
最大功率耗散 (Abs): | 1.5 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 130 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCP56T1/D | ETC |
获取价格 |
NPN Silicon Epitaxial Transistor | |
BCP56T1G | ONSEMI |
获取价格 |
NPN Silicon Epitaxial Transistor | |
BCP56T1SERIES | MOTOROLA |
获取价格 |
MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT | |
BCP56T3 | ONSEMI |
获取价格 |
NPN Silicon Epitaxial Transistor | |
BCP56T3G | ONSEMI |
获取价格 |
NPN Silicon Epitaxial Transistor | |
BCP56TA | DIODES |
获取价格 |
NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 | |
BCP56-TAPE-13 | NXP |
获取价格 |
TRANSISTOR 1 A, 80 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power | |
BCP56-TAPE-7 | NXP |
获取价格 |
TRANSISTOR 1 A, 80 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power | |
BCP56TC | DIODES |
获取价格 |
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 | |
BCP56TF | ETC |
获取价格 |
BCP56T/SOT223/SC-73 |