Datasheet > BAV23A-400MA-SOT-23

BAV23A-400MA-SOT-23

更新时间： 2024-12-01 01:15:23

品牌	Logo	应用领域
南晶电子 - DGNJDZ		/
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1页	319K
描述
SOT-23 Plastic-Encapsulate Diodes

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中文翻译

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数据手册

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BAV23A-400MA-SOT-23 数据手册

DONGGUAN NANJING ELECTRONICS LTD.,

SOT-23 Plastic-Encapsulate Diodes

SOT-23

BAV23A/C/S

SCHOTTKY BARRIER DIODE

FEATURES

Fast Switching Speed

High Conductance

For General Purpose Switching Applications

BAV23A

BAV23C

BAV23S

MARKING: KT7

MARKING: KT6

MARKING:KL31

MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )

Symbol

Parameter

Value

Unit

V_RRM

Peak Repetitive Reverse Voltage

250

V_RWM

Working Peak Reverse Voltage

V_R(RMS)

I_O

RMS Reverse Voltage

175

400

Average Rectified Output Current

Non-repetitive Peak Forward Surge Current @ t=1μs

@ t=100μs

I_FSM

@ t=10ms

1.7

P_D

R_ΘJA

T_j

Power Dissipation

350

286

125

-55~+150

℃/W

℃

Thermal Resistance from Junction to Ambient

Junction Temperature

Storage Temperature

T_stg

℃

ELECTRICAL CHARACTERISTICS(T_a=25℃ unless otherwise specified)

Parameter

Reverse voltage

Reverse current

Symbol

V_(BR)

I_R

Test conditions

Min

Typ

Max

Unit

I_R=100μA

V_R=250V

I_F=100mA

250

0.1

μA

Forward voltage

V_F

I_F=200mA

1.25

Total capacitance

C_tot

t_rr

V_R=0V,f=1MHz

Reverse recovery time

I_F= I_R=30mA, I_rr=0.1×I_R, R_L=100Ω

B,Jul,2012

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