Datasheet > BAV23C

BAV23C

更新时间： 2024-11-18 06:41:31

品牌	Logo	应用领域
SECOS		肖特基二极管光电二极管
页数	文件大小	规格书
2页	394K
描述
Plastic Encapsulated Schottky Diode

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BAV23C 数据手册

BAV23 Series

BAV23A / BAV23C / BAV23S

Plastic Encapsulated Schottky Diode

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

SOT-23

FEATURES

Fast Switching Speed

For General Purpose Switching Applications

High Conductance

Top View

C B

Millimeter

REF.

Min.

Max.

3.04

2.55

1.40

1.15

Min.

Max.

0.18

0.60

2.80

2.10

1.20

0.89

0.09

0.45

0.08

0.177

0.6 REF.

1.80

0.30

2.00

0.50

0.89

1.02

BAV23A, Marking: KT7

BAV23C, Marking: KT6

BAV23S, Marking: KL31

ABSOLUTE MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Peak Repetitive Peak Reverse Voltage

V_RRM

250

Working Peak Reverse Voltage

DC Blocking Voltage

V_RWM

V_R

200

Forward Continuous Current

I_FM

400

9.0

3.0

1.7

350

@ t = 1.0 µs

Non-Repetitive Peak Forward Surge Current @ t = 100 µs

I_FSM

@ t = 10 ms

Power Dissipation

P_D

R_θJA

T_J

°C / W

°C

Thermal Resistance Junction to Ambient Air

Operating Junction Temperature

Storage Temperature

357

150

T_STG

-65 ~ +150

°C

ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)

Parameters

Symbol Min.

Max.

Unit

Test Conditions

Reverse Breakdown Voltage

V_(BR)

I_R

250

I_R= 100 μA

Reverse Voltage Leakage Current

Forward Voltage

0.1

μA

V_R= 250 V

1.25

I_F= 100 mA

I_F= 200 mA

V_F

C_T

Total Capacitance

V_R= 0, f = MHz

I_F= I_R= 30 mA,

I_rr= 0.1 x I_R, R_L= 100 Ω

Reverse Recovery Time

t_RR

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

01-June-2007 Rev. B

Page 1 of 2

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