BAV23C-G
Vishay Semiconductors
www.vishay.com
Small Signal Switching Diode, Dual
FEATURES
• Silicon epitaxial planar diode
• Fast switching dual diode with common cathode
3
• AEC-Q101 qualified available
(part number on request)
1
2
• Base P/N-G3 - green, commercial grade
18108_1
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
MECHANICAL DATA
Case: SOT-23
Weight: approx. 8.1 mg
Packaging codes / options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
ORDERING CODE
CIRCUIT CONFIGURATION
Common cathode
TYPE MARKING
REMARKS
BAV23C-G
BAV23C-G3-08 or BAV23C-G3-18
KT7
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
200
250
9.0
UNIT
V
Continuous reverse voltage
VR
Repetitive peak reverse voltage
Non-repetitive peak forward current
Non-repetitive peak forward surge current
Maximum average forward rectified current (1)
Forward continuous current (2)
Repetitive peak forward current
Power dissipation (2)
VRRM
IFSM
IFSM
IFAV
V
t = 1 μs
t = 1 s
A
0.5
A
200
400
625
350
mA
mA
mA
mW
IF
IFRM
Ptot
Notes
(1)
Measured under pulse conditions; pulse time = tp 0.3 ms
Device on fiberglass substrate
(2)
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air (1)
TEST CONDITION
SYMBOL
RthJA
Tj
VALUE
357
UNIT
K/W
°C
Junction temperature
150
Storage temperature range
Operating temperature range
Tstg
-65 to +150
-55 to +150
°C
Top
°C
Note
(1)
Device on fiberglass substrate
Rev. 1.5, 13-Feb-18
Document Number: 85866
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000