5秒后页面跳转
BAV23C-G PDF预览

BAV23C-G

更新时间: 2024-09-27 14:55:31
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 105K
描述
Small Signal Switching Diode, Dual

BAV23C-G 数据手册

 浏览型号BAV23C-G的Datasheet PDF文件第2页浏览型号BAV23C-G的Datasheet PDF文件第3页浏览型号BAV23C-G的Datasheet PDF文件第4页浏览型号BAV23C-G的Datasheet PDF文件第5页 
BAV23C-G  
Vishay Semiconductors  
www.vishay.com  
Small Signal Switching Diode, Dual  
FEATURES  
• Silicon epitaxial planar diode  
• Fast switching dual diode with common cathode  
3
• AEC-Q101 qualified available  
(part number on request)  
1
2
• Base P/N-G3 - green, commercial grade  
18108_1  
• Material categorization:  
for definitions of compliance please see  
www.vishay.com/doc?99912  
DESIGN SUPPORT TOOLS click logo to get started  
Models  
Available  
MECHANICAL DATA  
Case: SOT-23  
Weight: approx. 8.1 mg  
Packaging codes / options:  
18/10K per 13" reel (8 mm tape), 10K/box  
08/3K per 7" reel (8 mm tape), 15K/box  
PARTS TABLE  
PART  
ORDERING CODE  
CIRCUIT CONFIGURATION  
Common cathode  
TYPE MARKING  
REMARKS  
BAV23C-G  
BAV23C-G3-08 or BAV23C-G3-18  
KT7  
Tape and reel  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
200  
250  
9.0  
UNIT  
V
Continuous reverse voltage  
VR  
Repetitive peak reverse voltage  
Non-repetitive peak forward current  
Non-repetitive peak forward surge current  
Maximum average forward rectified current (1)  
Forward continuous current (2)  
Repetitive peak forward current  
Power dissipation (2)  
VRRM  
IFSM  
IFSM  
IFAV  
V
t = 1 μs  
t = 1 s  
A
0.5  
A
200  
400  
625  
350  
mA  
mA  
mA  
mW  
IF  
IFRM  
Ptot  
Notes  
(1)  
Measured under pulse conditions; pulse time = tp 0.3 ms  
Device on fiberglass substrate  
(2)  
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
Thermal resistance junction to ambient air (1)  
TEST CONDITION  
SYMBOL  
RthJA  
Tj  
VALUE  
357  
UNIT  
K/W  
°C  
Junction temperature  
150  
Storage temperature range  
Operating temperature range  
Tstg  
-65 to +150  
-55 to +150  
°C  
Top  
°C  
Note  
(1)  
Device on fiberglass substrate  
Rev. 1.5, 13-Feb-18  
Document Number: 85866  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与BAV23C-G相关器件

型号 品牌 获取价格 描述 数据表
BAV23C-G3-08 VISHAY

获取价格

Rectifier Diode, 2 Element, 0.2A, 250V V(RRM), Silicon, GREEN PACKAGE-3
BAV23CHE3 MCC

获取价格

Tape : 3K/Reel, 120K/Ctn;
BAV23C-HE3-08 VISHAY

获取价格

DIODE ARRAY GP 200V 200MA SOT23
BAV23C-HE3-18 VISHAY

获取价格

DIODE ARRAY GP 200V 200MA SOT23
BAV23CL ONSEMI

获取价格

Dual High Voltage Common Cathode Switching Diode
BAV23CL_16 ONSEMI

获取价格

Dual High Voltage Common Cathode Switching Diode
BAV23CLT1G ONSEMI

获取价格

Dual High Voltage Common Cathode Switching Diode
BAV23CLT3G ONSEMI

获取价格

Dual High Voltage Common Cathode Switching Diode
BAV23CQ DIODES

获取价格

SURFACE MOUNT HIGH VOLTAGE DUAL SWITCHING DIODE
BAV23CQ YANGJIE

获取价格

SOT-23