Datasheet > BAV23C-Q

BAV23C-Q

更新时间： 2024-11-19 11:12:31

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
10页	202K
描述
Dual high-voltage switching diodesProduction

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BAV23C-Q 数据手册

BAV23C-Q

Dual high-voltage switching diodes

2 February 2022

Product data sheet

1. General description

Dual high-voltage switching diodes, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted

Device (SMD) plastic package.

2. Features and benefits

•

High switching speed: t_rr≤ 50 ns

•

Low leakage current

Repetitive peak reverse voltage: V_RRM≤ 250 V

Low capacitance: C_d≤ 2 pF

Small SMD plastic package

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

High-speed switching at high voltage

High-voltage general-purpose switching

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

I_R

reverse current

reverse voltage

V_R= 200 V

100

200

V_R

t_rr

reverse recovery time I_F= 10 mA; I_R= 10 mA; I_R(meas)= 1 mA;

R_L= 100 Ω; T_amb= 25 °C

12 3 4 5 6 7...10

中文翻译

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