Datasheet > BAV23C/DG,215

BAV23C/DG,215

更新时间： 2024-11-19 03:00:11

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
13页	281K
描述
DIODE 0.225 A, 250 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, HALOGEN FREE, PLASTIC PACKAGE-3, Signal Diode

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BAV23C/DG,215 数据手册

BAV23 series

Dual high-voltage switching diodes

Rev. 07 — 19 March 2010

Product data sheet

1. Product profile

1.1 General description

Dual high-voltage switching diodes, encapsulated in small Surface-Mounted

Device (SMD) plastic packages.

Table 1.

Product overview

Type number

Package

NXP

Configuration

JEDEC

TO-236AB

BAV23A

BAV23C

BAV23S

BAV23

SOT23

SOT143B

dual common anode

dual common cathode

dual series

dual isolated

1.2 Features and benefits

 High switching speed: t_rr 50 ns

 Low leakage current

 Low capacitance: C_d 2 pF

 Small SMD plastic package

 Repetitive peak reverse voltage:

V_RRM 250 V

1.3 Applications

 High-speed switching at high voltage

 High-voltage general-purpose switching

1.4 Quick reference data

Table 2.

Symbol

Per diode

I_R

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

reverse current

V_R= 200 V

100

200

V_R

reverse voltage

[1]

t_rr

reverse recovery time

[1] When switched from I_F= 10 mA to I_R= 10 mA; R_L= 100 ; measured at I_R= 1 mA.

12 3 4 5 6 7...13

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