Datasheet > BAV23C

BAV23C

更新时间： 2024-11-19 02:55:23

品牌	Logo	应用领域
海德 - HDSEMI		光电二极管
页数	文件大小	规格书
4页	2725K
描述
SOT-23 Plastic-Encapsulate Diodes

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中文翻译

获取价格

数据手册

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BAV23C 数据手册

BAV23A/C/S

SOT-23 Plastic-Encapsulate Diodes

Switching Diodes

Features

SOT- 23

●

Fast Switching Speed

High Conductance

For General Purpose Switching Applications

Marking:

BAV23A

BAV23S

BAV23C

MARKING:KT7

MARKINGKT6

MARKING:KL31

Symbol

V_RRM

Parameter

Value

Unit

Peak Repetitive Reverse Voltage

250

V_RWM

Working Peak Reverse Voltage

RMS Reverse Voltage

V_R(RMS)

I_O

175

225

1.7

Average Rectified Output Current

I_FSM

Non-repetitive Peak Forward Surge Current @ t=8.3ms

Power Dissipation

P_D

R_ΘJA

T_j

350

357

150

℃/W

℃

Thermal Resistance from Junction to Ambient

Junction Temperature

Storage Temperature

-55~+150

T_stg

℃

Electrical Characteristics (Ta=25℃ Unless otherwise specified）

Parameter

Reverse voltage

Reverse current

Symbol

V_(BR)

I_R

Test conditions

Min

Typ

Max

Unit

I_R=100μA

V_R=250V

I_F=100mA

250

0.1

μA

Forward voltage

V_F

I_F=200mA

1.25

Total capacitance

C_tot

t_rr

V_R=0V,f=1MHz

Reverse recovery time

I_F= I_R=30mA, I_rr=0.1×I_R, R_L=100Ω

igh Diode Semiconductor

12 3 4

中文翻译

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