Datasheet > BAV23C

BAV23C

更新时间： 2024-11-19 17:15:23

品牌	Logo	应用领域
友台半导体 - UMW		开关二极管
页数	文件大小	规格书
3页	455K
描述
开关二极管

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中文翻译

获取价格

数据手册

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BAV23C 数据手册

UMW BAV23A/C/S

UMW

SOT-23 Plastic-Encapsulate Transistors

SWITCHING DIODE

BAV23A/C/S

SOT-23

FEATURES

Fast Switching Speed

High Conductance

For General Purpose Switching Applications

BAV23A

BAV23C

BAV23S

MARKING: KT7

MARKING: KT6

MARKING:KL31

KT7

KT6

KL31

Solid dot = Green molding compound device,

the normal device

if none,

KT7

KT6

KL31

MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )

Symbol

Parameter

Value

Unit

V_RRM

Peak Repetitive Reverse Voltage

250

V_RWM

Working Peak Reverse Voltage

RMS Reverse Voltage

V_R(RMS)

I_O

175

225

Average Rectified Output Current

I_FSM

1.7

Non-repetitive Peak Forward Surge Current @ t=8.3ms

Power Dissipation

P_D

R_ΘJA

T_j

350

℃/W

℃

Thermal Resistance from Junction to Ambient

Junction Temperature

357

150

Storage Temperature

-55~+150

T_stg

℃

ELECTRICAL CHARACTERISTICS(T_a=25℃ unless otherwise specified)

Parameter

Reverse voltage

Reverse current

Symbol

V_(BR)

I_R

Test conditions

Min

Typ

Max

Unit

I_R=100μA

V_R=250V

I_F=100mA

250

0.1

μA

Forward voltage

V_F

I_F=200mA

1.25

Total capacitance

C_tot

t_rr

V_R=0V,f=1MHz

Reverse recovery time

I_F= I_R=30mA, I_rr=0.1×I_R, R_L=100Ω

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友台半导体有限公司

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