Datasheet > BAV23A-Q

BAV23A-Q

更新时间： 2024-09-28 11:12:19

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
10页	203K
描述
Dual high-voltage switching diodesProduction

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BAV23A-Q 数据手册

BAV23A-Q

Dual high-voltage switching diodes

4 April 2022

Product data sheet

1. General description

Dual high-voltage switching diodes, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted

Device (SMD) plastic package.

2. Features and benefits

•

High switching speed: t_rr≤ 50 ns

•

Low leakage current

Repetitive peak reverse voltage: V_RRM≤ 250 V

Low capacitance: C_d≤ 2 pF

Small SMD plastic package

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

High-speed switching at high voltage

High-voltage general-purpose switching

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

I_F

forward current

reverse voltage

reverse current

Single diode loaded

V_R= 200 V

[1]

225

200

100

V_R

I_R

t_rr

reverse recovery time I_F= 10 mA; I_R= 10 mA; I_R(meas)= 1 mA;

R_L= 100 Ω; T_amb= 25 °C

[1] Single diode loaded.

12 3 4 5 6 7...10

中文翻译

下载PDF

与BAV23A-Q相关器件

型号	品牌	获取价格	描述	数据表
BAV23A-Q1	ANBON	获取价格	SOT-23
BAV23AQ-13-F	DIODES	获取价格	SURFACE MOUNT HIGH VOLTAGE DUAL SWITCHING DIODE
BAV23AQ-7-F	DIODES	获取价格	SURFACE MOUNT HIGH VOLTAGE DUAL SWITCHING DIODE
BAV23A-TP	MCC	获取价格	Rectifier Diode, 2 Element, 0.225A, 200V V(RRM), Silicon, LEAD FREE, PLASTIC PACKSGE-3
BAV23A-TP-HF	MCC	获取价格	Rectifier Diode, 2 Element, 0.225A, 200V V(RRM), Silicon,
BAV23C	NXP	获取价格	Dual high-voltage switching diodes
BAV23C	SECOS	获取价格	Plastic Encapsulated Schottky Diode
BAV23C	KEC	获取价格	SILICON EPITAXIAL PLANAR DIODE
BAV23C	DIODES	获取价格	SURFACE MOUNT SWITCHING DIODE
BAV23C	HDSEMI	获取价格	SOT-23 Plastic-Encapsulate Diodes