Datasheet > BAS85

BAS85

更新时间： 2024-11-12 14:54:11

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描述
Schottky Barrier Rectifiers

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技术参数
数据手册

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BAS85 技术参数

是否无铅：	不含铅	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.64
Is Samacsys：	N	二极管类型：	RECTIFIER DIODE
Base Number Matches：	1

BAS85 数据手册

www.eicsemi.com

SCHOTTKY BARRIER DIODE

BAS85

MiniMELF (SOD-80C)

FEATURES :

Cathode Mark

* For general purpose applications.

* This diode features low turn-on voltage.

* This device isprotected by a PN junction guard

guard ring against excessive voltage, such as

electrostatic discharges

f 0.063 (1.64)

0.055 (1.40)

0.019(0.48)

0.011(0.28)

0.142(3.6)

0.134(3.4)

* This diode is also available in the DO-35 case

with type designation BAT85.

* Pb / RoHS Free

Mounting Pad Layout

0.098 (2.50)

Max.

0.049 (1.25)Min.

MECHANICAL DATA :

Case: MiniMELF Glass Case (SOD-80C)

Weight: approx. 0.05g

0.079 (2.00)Min.

0.197 (5.00)

REF

Dimensions in inches and ( millimeters )

Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)

Parameter

Symbol

Value

Unit

V_R

I_F

Continuous Reverse Voltage

Continuous Forward Current

Peak Forward Current

°C/W

°C

200⁽¹⁾

300⁽¹⁾

600⁽¹⁾

200⁽¹⁾

430⁽¹⁾

I_FM

I_FSM

P_D

Forward Surge Current (tp < 1s)

Power Dissipation (Infinite Heatsink)

Thermal Resistance Junction to Ambient Air

Junction Temperature

R_q

T_J

125

T_STG

-55 to + 150

°C

Storage temperature range

Note: (1) Valid provided that electrodes are kept at ambient temperature.

Electrical Characteristics (Ta = 25 °C unless otherwise noted)

Test Condition

Min

Typ

Max

Unit

Parameter

Reverse Breakdown Voltage

Symbol

V_(BR)R

I_R

I_R= 10 mA (pulsed)

V_R= 25 V

μA

Reverse Current

0.2

2.0

0.32

0.40

I_F= 1mA

I_F= 10mA

Forward Voltage

V_F

I_F= 30mA

Pulse Test tp <300μs , d <2%

0.5

I_F= 100mA

0.80

V_R= 1V, f = 1MHz

I_F=10mA to I_R= 10mA ,

measured at I_R= 1mA

Diode Capacitance

Trr

Reverse Recovery Time

Page 1 of 2

Rev. 03 : July 16, 2010

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