Datasheet > BAS85

BAS85

更新时间： 2024-11-11 08:48:31

品牌	Logo	应用领域
美微科 - MCC		二极管
页数	文件大小	规格书
3页	684K
描述
200mW Small Signal Schottky Barrier Diodes 30 Volts

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中文翻译

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BAS85 数据手册

M C C

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BAS85

Micro Commercial Components

Features

•

Moisture Sensitivity Level 1

This diode features low turn-on voltage

The devices are protected by a PN junction guard ring against

excessive voltage, such as electrostatic discharges

This diode is also available in a DO-35 case with type designation

200mW

Small Signal Schottky

Barrier Diodes

30 Volts

•

BAT85

•

Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates

RoHS Compliant. See ordering information)

Maximum Ratings

MINIMELF

Rating

Unit

Symbol

V_R

I_F

I_FM

Continuous Reverse Voltage

200⁽²⁾

300⁽²⁾

600⁽²⁾

Forward DC Current at Tamb=25℃

Repetitive Peak Forward Current T_amb=25℃

Surge Forward Current at tp<1s, T_amb=25℃

Power Dissipation at Tamb=65℃

I_FSM

P_tot

R_JA

T_J

Cathode Mark

200⁽²⁾

430⁽²⁾

℃/W

℃

Thermal Resistance Junction to Ambient Air

Junction Temperature

125

℃

T_STG

Storage Temperature

-55 to +150

Electrical Characteristics @ 25 C Unless Otherwise Specified

Symbol

Parameter

Min

Typ

Max

Units

Reverse Breakdown Voltage

(I_R=10µAdc Pulsed)

Forward Voltage

V_(BR)R

---

0.5

---

0.24

0.32

0.40

---

I_F=0.1mA, Pulse test t_p<300μs

I_F=1.0mA, Pulse test t_p<300μs

I_F=10mA, Pulse test t_p<300μs

I_F=30mA, Pulse test t_p<300μs

I_F=100mA, Pulse test t_p<300μs

V_F

0.80

DIMENSIONS

Leakage Current ⁽³⁾

(V_R=25Vdc)

INCHES

MIN

.130

.008

.055

MIN

3.30

.20

I_R

C_tot

t_rr

---

0.2

---

2.0

µA

DIM

MAX

.146

.016

.059

MAX

3.70

.40

NOTE

Capacitance

(V_R=1.0V, f=1.0MHz)

Reverse Recovery Time

(I_F=10mA, I_R=10mA, Irr=1.0mA)

1.40

1.50

---

5.0

Notes:1. Lead in Glass Exemption Applied, see EU Directive Annex 5.

2. Valid provided that electrodes are kept at ambient temperature

SUGGESTED SOLDER

PAD LAYOUT

0.105

0.075”

0.030”

www.mccsemi.com

Revision: A

2011/01/01

1 of 3

12 3

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