5秒后页面跳转
BAS16LP_08 PDF预览

BAS16LP_08

更新时间: 2024-11-18 08:48:19
品牌 Logo 应用领域
美台 - DIODES 二极管开关
页数 文件大小 规格书
3页 104K
描述
SURFACE MOUNT SWITCHING DIODE

BAS16LP_08 数据手册

 浏览型号BAS16LP_08的Datasheet PDF文件第2页浏览型号BAS16LP_08的Datasheet PDF文件第3页 
BAS16LP  
SURFACE MOUNT SWITCHING DIODE  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
Fast Switching Speed  
Case: DFN1006-2  
Case Material: Molded Plastic, "Green" Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminal Connections: Cathode Dot  
Terminals: Finish - NiPdAu over Copper leadframe.  
Solderable per MIL-STD-202, Method 208  
Ultra-Small Leadless Surface Mount Package  
For General Purpose Switching Applications  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
Qualified to AEC-Q101 Standards for High Reliability  
Marking Information: See Page 2  
Ordering Information: See Page 2  
Weight: 0.0009 grams (approximate)  
DFN1006-2  
BOTTOM VIEW  
Maximum Ratings @T = 25°C unless otherwise specified  
A
Characteristic  
Non-Repetitive Peak Reverse Voltage  
Symbol  
VRM  
Value  
100  
Unit  
V
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
75  
V
RMS Reverse Voltage  
Forward Continuous Current  
Average Rectified Output Current  
53  
300  
200  
V
mA  
mA  
VR(RMS)  
IFM  
IO  
2.0  
1.0  
Non-Repetitive Peak Forward Surge Current  
@ t = 1.0μs  
@ t = 1.0s  
A
IFSM  
Thermal Characteristics  
Characteristic  
Symbol  
PD  
Value  
250  
Unit  
mW  
Power Dissipation (Note 3)  
Thermal Resistance Junction to Ambient Air (Note 3)  
Operating and Storage Temperature Range  
500  
°C/W  
°C  
Rθ  
TJ, TSTG  
JA  
-65 to +150  
Electrical Characteristics @T = 25°C unless otherwise specified  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
Test Condition  
Reverse Breakdown Voltage (Note 4)  
75  
V
V(BR)R  
IR = 100μA  
IF = 1.0mA  
IF = 10mA  
IF = 50mA  
IF = 150mA  
0.715  
0.855  
1.0  
Forward Voltage  
V
VF  
1.25  
VR = 75V  
μA  
μA  
μA  
nA  
1.0  
50  
30  
25  
VR = 75V, TJ = 150°C  
VR = 25V, TJ = 150°C  
VR = 20V  
Leakage Current (Note 4)  
IR  
Total Capacitance  
2.0  
4.0  
pF  
CT  
trr  
VR = 0, f = 1.0MHz  
IF = IR = 10mA,  
Irr = 0.1 x IR, RL = 100Ω  
Reverse Recovery Time  
ns  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
4. Short duration pulse test used to minimize self-heating effect.  
1 of 3  
www.diodes.com  
March 2008  
© Diodes Incorporated  
BAS16LP  
Document number: DS30505 Rev. 11 - 2  

与BAS16LP_08相关器件

型号 品牌 获取价格 描述 数据表
BAS16LP_11 DIODES

获取价格

SURFACE MOUNT SWITCHING DIODE
BAS16LP-7 DIODES

获取价格

SURFACE MOUNT SWITCHING DIODE
BAS16LP-7B DIODES

获取价格

SURFACE MOUNT SWITCHING DIODE
BAS16LPQ DIODES

获取价格

SURFACE MOUNT SWITCHING DIODE
BAS16L-Q NEXPERIA

获取价格

High-speed switching diodeProduction
BAS16LS NEXPERIA

获取价格

High-speed switching diodeProduction
BAS16LS-Q NEXPERIA

获取价格

High-speed switching diodeProduction
BAS16LT/R NXP

获取价格

RECTIFIER DIODE,100V V(RRM),SOD-882
BAS16LT1 WILLAS

获取价格

SOT-23 Plastic-Encapsulate Diodes
BAS16LT1 KISEMICONDUCTOR

获取价格

SOT-23 Plastic-Encapsulate Diodes