Datasheet > BAS16LT1

BAS16LT1

更新时间： 2024-11-17 22:48:11

品牌	Logo	应用领域
乐山 - LRC		二极管开关
页数	文件大小	规格书
2页	52K
描述
Switching Diode

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中文翻译

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数据手册
替代型号

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BAS16LT1 数据手册

LESHAN RADIO COMPANY, LTD.

Switching Diode

BAS16LT1

CATHODE

ANODE

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Continuous Reverse Voltage

Peak Forward Current

V _R

I _F

Vdc

200

500

mAdc

Peak Forward Surge Current

I _FM(surge)

CASE 318–08, STYLE 8

SOT–23 (TO–236AB)

DEVICE MARKING

BAS16LT1 = A6

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

T_A= 25°C

P_D

225

Derate above 25°C

1.8

556

300

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

Total Device Dissipation

R_θJA

P_D

Alumina Substrate, (2) T_A= 25°C

Derate above 25°C

2.4

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

R_θJA

417

T_J, T_stg

–55 to +150

°C

ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Reverse Voltage Leakage Current

(V _R= 75Vdc)

Symbol

Min

Max

Unit

I _R

µAdc

—

1.0

(V _R= 75 Vdc, T _J= 150°C)

(V _R= 25 Vdc, T _J= 150°C)

Reverse Breakdown Voltage

(I _BR= 100 µAdc)

V _(BR)

V _F

—

Vdc

Forward Voltage

(I _F= 1.0 mAdc)

—

715

855

(I _F= 10 mAdc)

(I _F= 50 mAdc)

1000

1250

(I _F= 150 mAdc)

Diode Capacitance

C _D

V _FR

t _rr

—

–-

—

2.0

1.75

6.0

Vdc

(V _R= 0, f = 1.0 MHz)

Forward Recovery Voltage

(I _F= 10 mAdc, t _r= 20ns )

Reverse Recovery Time

(I _F= I _R= 10 mAdc, R _L= 50 Ω)

Stored Charge

Q _S

(I _F= 10 mAdc to V _R= 5.0Vdc, R _L= 500 Ω)

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

G2–1/2

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BAS16LT1 替代型号

型号	品牌	替代类型	描述	数据表
BAS16WS-GS18	VISHAY	功能相似	Rectifier Diode, 1 Element, 0.25A, 100V V(RRM),
BAS16_D87Z	ONSEMI	功能相似	Rectifier Diode, 1 Element, 0.2A, 85V V(RRM), Silicon

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