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BAS16M3T5G PDF预览

BAS16M3T5G

更新时间: 2024-11-18 08:48:19
品牌 Logo 应用领域
安森美 - ONSEMI 二极管开关
页数 文件大小 规格书
4页 81K
描述
Switching Diode

BAS16M3T5G 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:SOT包装说明:HALOGEN FREE AND ROHS COMPLIANT, SOT-723, CASE 631AA-01, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.69配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.715 VJESD-30 代码:R-PDSO-F3
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:0.5 A元件数量:1
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:0.5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.26 W认证状态:Not Qualified
最大重复峰值反向电压:100 V最大反向恢复时间:0.006 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Tin (Sn)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

BAS16M3T5G 数据手册

 浏览型号BAS16M3T5G的Datasheet PDF文件第2页浏览型号BAS16M3T5G的Datasheet PDF文件第3页浏览型号BAS16M3T5G的Datasheet PDF文件第4页 
BAS16M3T5G  
Switching Diode  
Features  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
http://onsemi.com  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
75  
Unit  
Vdc  
3
1
Continuous Reverse Voltage  
Peak Forward Current  
V
R
CATHODE  
ANODE  
I
F
200  
500  
mAdc  
mAdc  
Peak Forward Surge Current  
I
FM(surge)  
MARKING  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
DIAGRAM  
3
SOT723  
CASE 631AA  
STYLE 2  
V M  
THERMAL CHARACTERISTICS  
2
1
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation,  
FR4 Board (Note 1)  
T = 25°C  
A
P
D
V
M
= Specific Device Code  
= Date Code  
260  
mW  
Derated above 25°C  
2.0  
mW/°C  
°C/W  
Thermal Resistance,  
R
490  
q
JA  
ORDERING INFORMATION  
JunctiontoAmbient (Note 1)  
Device  
Package  
Shipping  
Total Device Dissipation,  
P
D
FR4 Board (Note 2)  
580  
mW  
SOT723  
(PbFree)  
BAS16M3T5G  
8000 / Tape & Reel  
T = 25°C  
A
Derated above 25°C  
4.6  
mW/°C  
°C/W  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Thermal Resistance,  
JunctiontoAmbient (Note 2)  
R
215  
q
JA  
Junction and Storage  
Temperature Range  
T , T  
J
55 to  
+150  
°C  
stg  
1. FR4 @ Minimum Pad  
2. FR4 @ 1.0 × 1.0 Inch Pad  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
August, 2011 Rev. 2  
BAS16M3/D  
 

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