Datasheet > BAS16P2T5G_13

BAS16P2T5G_13

更新时间： 2024-11-19 01:15:19

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
4页	95K
描述
Switching Diode

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BAS16P2T5G_13 数据手册

BAS16P2T5G

Switching Diode

The BAS16P2T5G Switching Diode is a spin−off of our popular

SOT−23 three−leaded device. It is designed for switching applications

and is housed in the SOD−923 surface mount package. This device is

ideal for low−power surface mount applications, where board space is

at a premium.

http://onsemi.com

Features

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

CATHODE

ANODE

MAXIMUM RATINGS

MARKING

DIAGRAM

Rating

Symbol

Value

100

Unit

Vdc

Continuous Reverse Voltage

Peak Forward Current

200

mAdc

A6M

SOD−923

Peak Forward Surge Current

500

FM(surge)

CASE 514AA

PLASTIC

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

A6 = Specific Device Code

= Month Code

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

ORDERING INFORMATION

Thermal Resistance,

Junction−to−Ambient (Note 1)

Total Power Dissipation @

520

240

°C/W

†

Device

Package

Shipping

T = 25°C

BAS16P2T5G

SOD−923 8000 / Tape & Reel

(Pb−Free)

Thermal Resistance,

Junction−to−Ambient (Note 2)

Total Power Dissipation @

T = 25°C

175

710

°C/W

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Junction and Storage

Temperature Range

T , T

−55 to

+150

°C

stg

1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06″ thick single

sided. Operating to steady state.

2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06″ thick single

sided. Operating to steady state.

Publication Order Number:

May, 2013 − Rev. 1

BAS16P2/D

12 3 4

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