Datasheet > BAS16S

BAS16S

更新时间： 2024-11-21 06:41:27

品牌	Logo	应用领域
SECOS		二极管开关测试光电二极管
页数	文件大小	规格书
2页	190K
描述
Surface Mount Switching Diode

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中文翻译

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技术参数
数据手册

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BAS16S 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.75
Base Number Matches：	1

BAS16S 数据手册

BAS16S

Surface Mount Switching Diode

Elektronische Bauelemente

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

S OD-523

CATHODE MARK

FEATURES

0.3 0.05

High-Speed Switching Applications

Lead Finish: 100% Matte Sn ( Tin )

℃

Qualified Reflow Temperature: 260

Extremely Small SOD-523 Package

0.12 0.05

0.8±0.05

MARKING: A6

0.6±0.1

Dimensions in millimeters

Maximum Ratings and Electrical Characteristics, Single Diode @T_A=25℃

Parameter

DC reverse voltage

Symbol

V_R

Limits

Unit

Forward current

I_F

200

500

150

635

150

℃/W

℃

Pak forward surge current

Total Device Dissipation

I_FM(surge)

P_D

Thermal Resistance Junction to Ambient

Junction and storage temperature

T_j,T_stg

Electrical Ratings @T_A=25℃

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

I_R=100uA

I_F=1mA

Reverse breakdown voltage

V_(BR)R

V_F1

V_F2

V_F3

V_F4

t_rr

715

855

1000

1250

6.0

I_F=10mA

I_F=50mA

I_F=150mA

Forward voltage

Reverse recovery Time

Reverse current

μA

I_F=I_R=10mAdc,R_L=50Ω

V_R=75V

I_R

1.0

V_FR

C_D

1.75

2.0

I_F=10mA, t_r= 20ns

V_R=0V,f=1MHZ

Forward recovery voltage

Diode Capacitance

Stored charge

Q_S

I_F=10mA, V_R=5.0V ,R_L=500Ω

Any changing of specification will not be informed individua

http://www.SeCoSGmbH.com

01-Jun-2007 Rev. A

Page 1 of 2

中文翻译

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