Datasheet > BAS16T

BAS16T

更新时间： 2024-10-15 18:10:07

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RECTRON		/
页数	文件大小	规格书
4页	334K
描述
Reverse Voltage Vr : 100 V;Forward Current Io : 150 mA;Max Surge Current : 2.0 A;Forward Voltage Vf : 1.25 V;Reverse Current Ir : 1.0 uA;Recovery Time : 4 ns;Package / Case : SOT-523;Mounting Style : SMT/SMD

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BAS16T 数据手册

BAS16T

Switching Diode

Unit:mm

SOT523

◇ Fast Switching Speed

◇ For General Purpose Switching Applictions

◇ High Conductance

◇ Low Current Leakage

◇ Small Outline Surface Mount Package

◇ RoHS compliant / Green EMC

Internal Structure

Device Marking Code

BAS16T

Maximum Ratings （Ta = 25 ℃）

Symbol

Parameter

Value

100

150

200

150

Units

Reverse Voltage

VRM

Peak Reverse Voltage

T_J

Average Rectified Current

Power Dissipation

℃

Junction Temperature

IFSM

NON-Repetitive Peak Forward Surge Current (@t=8.3ms.)

Peak Forward Current

Storage Temperature

Thermal Resistance

300

-55 to 155

625

℃

Tstg

Rth

℃/W

Electrical Characteristics （Ta = 25 ℃）

Symbol

Parameter

Test Conditions

I_F=1mA

Min

Max

Units

0.715

0.855

1.0

I_F=10mA

I_F=50mA

I_F=150mA

I_R=1uA

V_F

Forward Voltage

1.25

V_R

I_R

Reverse breakdown voltage

V_R=75V

V_R=20V

Reverse voltage leakage current

C_J

Typical Junction Capacitance

Reverse recovery time

V_R=0V, f=1.0MHz

I_F= I_R=10mA,Irr=0.1x I_R

R_L=100Ω

Trr

2024-03/03

REV:O

12 3 4

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