Datasheet > BAS16-MR

BAS16-MR

更新时间： 2024-09-30 23:34:31

品牌	Logo	应用领域
其他 - ETC		二极管过程控制系统 PCS
页数	文件大小	规格书
2页	37K
描述
DIODE BAS16 MINIREEL 500PCS

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中文翻译

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数据手册

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BAS16-MR 数据手册

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BAS16

CONNECTION DIAGRAM

2 NC

SOT-23

High Conductance Ultra Fast Diode

Sourced from Process 1P. See BAV99 for characteristics.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

W_IV

Working Inverse Voltage

Average Rectified Current

DC Forward Current

I_O

200

600

700

I_F

Recurrent Peak Forward Current

i_f

Peak Forward Surge Current

Pulse width = 1.0 second

Pulse width = 1.0 microsecond

Storage Temperature Range

i_f(surge)

1.0

2.0

-50 to +150

°C

T_stg

T_J

Operating Junction Temperature

150

°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

BAS16

P_D

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Ambient

350

2.8

357

mW/°C

°C/W

R_θ

1997 Fairchild Semiconductor Corporation

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