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BAS16LS

更新时间: 2024-11-19 11:12:51
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安世 - NEXPERIA /
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High-speed switching diodeProduction

BAS16LS 数据手册

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BAS16LS  
High-speed switching diode  
9 February 2021  
Product data sheet  
1. General description  
High-speed switching diode, encapsulated in a leadless ultra small DFN1006BD-2 (SOD882BD)  
Surface-Mounted Device (SMD) plastic package with side-wettable flanks.  
2. Features and benefits  
High switching speed: trr ≤ 4 ns  
Low leakage current  
Repetitive peak reverse voltage VRRM ≤ 100 V  
Suitable for Automatic Optical Inspection (AOI) of solder joint  
Low capacitance  
Reverse voltage VR ≤ 100 V  
Ultra small and leadless SMD plastic package  
3. Applications  
High-speed switching  
General-purpose switching  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
215  
0.5  
100  
4
Unit  
mA  
µA  
V
IF  
forward current  
reverse current  
reverse voltage  
Tj = 25 °C  
[1]  
-
-
-
-
-
-
-
-
IR  
VR  
trr  
VR = 80 V; Tj = 25 °C  
Tj = 25 °C  
reverse recovery time IF = 10 mA; IR = 10 mA; RL = 100 Ω;  
IR(meas) = 1 mA; Tamb = 25 °C  
ns  
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), 70 μm single-sided copper, tin-plated and standard footprint.  
 
 
 
 
 

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