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BAS16LT3G PDF预览

BAS16LT3G

更新时间: 2024-11-17 21:53:43
品牌 Logo 应用领域
安森美 - ONSEMI 二极管开关
页数 文件大小 规格书
4页 49K
描述
Switching Diode

BAS16LT3G 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:SOT-23包装说明:TO-236, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
Factory Lead Time:1 week风险等级:0.45
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.715 V
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:0.5 A元件数量:1
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.225 W认证状态:Not Qualified
最大重复峰值反向电压:100 V最大反向恢复时间:0.006 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

BAS16LT3G 数据手册

 浏览型号BAS16LT3G的Datasheet PDF文件第2页浏览型号BAS16LT3G的Datasheet PDF文件第3页浏览型号BAS16LT3G的Datasheet PDF文件第4页 
BAS16LT1  
Preferred Device  
Switching Diode  
Features  
Pb−Free Package is Available  
MAXIMUM RATINGS  
http://onsemi.com  
Rating  
Symbol  
Value  
75  
Unit  
Vdc  
Continuous Reverse Voltage  
Peak Forward Current  
V
R
I
F
200  
500  
mAdc  
mAdc  
3
1
CATHODE  
ANODE  
Peak Forward Surge Current  
I
FM(surge)  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
MARKING  
DIAGRAM  
3
THERMAL CHARACTERISTICS  
1
Characteristic  
Symbol  
Max  
Unit  
A6 D  
2
Total Device Dissipation FR5 Board  
(Note 1)  
P
D
SOT−23  
CASE 318  
STYLE 8  
225  
1.8  
mW  
T = 25°C  
A
Derate above 25°C  
mW/°C  
A6  
D
= Specific Device Code  
= Date Code  
Thermal Resistance,  
Junction−to−Ambient  
R
556  
°C/W  
q
JA  
Total Device Dissipation  
P
D
Alumina Substrate, (Note 2)  
300  
2.4  
mW  
ORDERING INFORMATION  
T = 25°C  
A
Derate above 25°C  
mW/°C  
Device  
Package  
Shipping  
Thermal Resistance,  
Junction−to−Ambient  
BAS16LT1  
SOT−23  
3000/Tape & Reel  
R
417  
°C/W  
°C  
q
JA  
BAS16LT3G  
SOT−23  
3000/Tape & Reel  
Junction and Storage Temperature  
T , T  
J
55 to +150  
stg  
(Pb−Free)  
1. FR5 = 1.0 0.75 0.062 in.  
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
May, 2004 − Rev. 3  
BAS16LT1/D  
 

BAS16LT3G 替代型号

型号 品牌 替代类型 描述 数据表
BAS16LT3 ONSEMI

完全替代

Switching Diode
BAS16LT1G ONSEMI

完全替代

Switching Diode
BAS16 ONSEMI

类似代替

(之前的 Fairchild)开关二极管,85 V 200 mA

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