Datasheet > BAS16LV

BAS16LV

更新时间： 2024-10-15 18:09:59

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
4页	1105K
描述
Reverse Voltage Vr : 100 V;Forward Current Io : 100 mA;Max Surge Current : 2.0 A;Forward Voltage Vf : 1.25 V;Reverse Current Ir : 0.1 uA;Recovery Time : 4 ns;Package / Case : DFN1006;Mounting Style : SMT/SMD;Notes : IFSM@t = 1.0us

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中文翻译

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数据手册

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BAS16LV 数据手册

BAS16LV

◇Fast switching devices

Pin &Polarity

◇Low Reverse Leakage Current

◇

RoHS Compliant

◇UL-94 V-0 / Green EMC

◇Matte Tin Lead finish (Pb-Free)

◇P/N suffix V means Halogen-free

◇P/N suffix V means AEC-Q101

qualified, e.g:BAS16LV

Device Marking Code

BAS16L

Maximum Ratings（Ta = 25 ℃）

Symbol

Parameter

Value

100

Units

V_RSM

V_RRM

V_RWM

V_R

Non-Repetitive Peak Reverse Voltage

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

Dc Blocking Voltage

I_FRM

I_O

Repetitive Peak Forward Current

300

Average Forward Current

Non-Repetitive Peak Forward Current^*1

Power Disspation

100

I_FSM

P_D

200

℃

T_J

Junction Temperature

150

T_STG

Storage Temperature

-55 to +150

℃

Electrical Characteristics （Ta = 25 ℃ unless otherwise noted）

Symbol

V_R

Parameter

Reverse Voltage

Conditions

I_R=100uA

Min

Typ

Max

Units

I_F=5mA

I_F=10mA

0.62

0.72

0.855

1.0

Forward Voltage

V_F

I_F=100mA

I_F=150mA

1.25

V_R=80V

100

Reverse Leakage Current

Capacitance

I_R

V_R=20V

V_R= 0.5V, f = 1MHz

I_F=I_R=10mA

I_RR= 1mA, R_L= 100Ω

T_RR

Reverse Recovery Time

2024-01/03

REV:O

*1: Pulse width = 1μs

12 3 4

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