BAS16LT1G, BAS16LT3G,
SBAS16LT1G, SBAS16LT3G
Switching Diode
Features
• AEC−Q101 Qualified and PPAP Capable
http://onsemi.com
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
3
1
CATHODE
ANODE
MAXIMUM RATINGS
Rating
Symbol
Value
75
Unit
Vdc
Continuous Reverse Voltage
Peak Forward Current
V
R
3
MARKING
DIAGRAM
I
F
200
500
mAdc
mAdc
1
Peak Forward Surge Current
I
FM(surge)
2
A6 M G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
SOT−23
CASE 318
STYLE 8
G
1
THERMAL CHARACTERISTICS
A6
M
G
= Specific Device Code
= Date Code*
= Pb−Free Package
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board
P
D
(Note 1)
225
1.8
mW
(Note: Microdot may be in either location)
T = 25°C
Derate above 25°C
A
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
556
°C/W
q
JA
ORDERING INFORMATION
Total Device Dissipation
P
D
Alumina Substrate, (Note 2)
300
2.4
mW
†
Device
Package
Shipping
T = 25°C
A
Derate above 25°C
mW/°C
BAS16LT1G
SOT−23
3000/Tape & Reel
(Pb−Free)
Thermal Resistance,
Junction−to−Ambient
R
417
°C/W
°C
q
JA
BAS16LT3G
SBAS16LT1G
SBAS16LT3G
SOT−23
(Pb−Free)
10000/Tape & Reel
3000/Tape & Reel
10000/Tape & Reel
Junction and Storage Temperature
T , T
J
−55 to +150
stg
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
October, 2011 − Rev. 9
BAS16LT1/D