ATF-46171

更新时间： 2024-10-31 22:36:27

品牌	Logo	应用领域
安捷伦 - AGILENT		晶体晶体管
页数	文件大小	规格书
3页	46K
描述
2-10 GHz Medium Power Gallium Arsenide FET

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中文翻译

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技术参数
数据手册

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ATF-46171 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Is Samacsys：	N	FET 技术：	JUNCTION
最高工作温度：	175 °C	极性/信道类型：	N-CHANNEL
子类别：	Other Transistors	Base Number Matches：	1

ATF-46171 数据手册

2–10 GHz Medium Power

Gallium Arsenide FET

Technical Data

ATF-46171

range.Thisnominally0.5 micron

gate length GaAs FET is an

Features

70 mil Flange Package

• High Output Power:

27.0 dBmTypicalP _1dBat4 GHz

interdigitated four-cell structure

using airbridge interconnects

between drain fingers. Total gate

peripheryis1.25 millimeters.

Proven gold based metallization

systems and nitride passivation

assure a rugged, reliable device.

• High Gain at 1 dB

Compression:

11.0 dBTypicalG _1dBat4 GHz

• High Power Efficiency:

38%Typicalat4 GHz

• Hermetic Metal-Ceramic

Stripline Package

This device is suitable for applica-

tions in space, airborne, military

ground and shipboard, and

Description

The ATF-46171 is a gallium

arsenide Schottky-barrier-gate

commercial environments. It is

supplied in a hermetic high

reliability package with low

field effect transistor designed for parasitic reactance and minimum

medium power, linear amplifica-

tion in the 2 to 10 GHz frequency

thermal resistance.

Electrical Specifications, T_A= 25°C

Symbol

Parameters and Test Conditions

Units Min. Typ. Max.

P_{1 dB}

Power Output @ 1 dB Gain Compression:

V_DS= 9 V, I_DS=125mA

f=4.0GHz dBm 25.0

f=8.0GHz

27.0

26.5

G_{1 dB}

1 dB Compressed Gain: V_DS= 9 V, I_DS= 125 mA

f=4.0GHz

f=8.0GHz

10.0

11.0

6.0

η_add

g_m

Efficiency@P :V =9V, I_DS=125mA

f=4.0GHz

mmho

1dB DS

Transconductance:V_DS=2.5V, I_DS=125mA

Saturated Drain Current: V_DS= 2.5 V, V_GS= 0 V

Pinch-off Voltage: V_DS= 2.5 V, I_DS= 5 mA

100

330

-3.5

I_DSS

V_P

200

-5.4

450

-2.0

5965-8729E

5-101

12 3

中文翻译

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