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APT60M80L2VFRG PDF预览

APT60M80L2VFRG

更新时间: 2024-11-09 14:47:43
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网开关脉冲晶体管
页数 文件大小 规格书
5页 164K
描述
Power Field-Effect Transistor, 65A I(D), 600V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264MAX, 3 PIN

APT60M80L2VFRG 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-264MA
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:compliant风险等级:5.14
其他特性:AVALANCHE RATED雪崩能效等级(Eas):3200 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (ID):65 A
最大漏源导通电阻:0.08 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSIP-T3JESD-609代码:e1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):260 A
认证状态:Not Qualified表面贴装:NO
端子面层:TIN SILVER COPPER端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

APT60M80L2VFRG 数据手册

 浏览型号APT60M80L2VFRG的Datasheet PDF文件第2页浏览型号APT60M80L2VFRG的Datasheet PDF文件第3页浏览型号APT60M80L2VFRG的Datasheet PDF文件第4页浏览型号APT60M80L2VFRG的Datasheet PDF文件第5页 
APT60M80L2VFR  
600V 65A 0.080Ω  
POWER MOS V® FREDFET  
Power MOS V® is a new generation of high voltage N-Channel enhancement  
mode power MOSFETs. This new technology minimizes the JFET effect,  
increases packing density and reduces the on-resistance. Power MOS V®  
also achieves faster switching speeds through optimized gate layout.  
L2VFR  
TO-264  
Max  
• TO-264 MAX Package  
• Avalanche Energy Rated  
D
S
• Faster Switching  
• Lower Leakage  
FAST RECOVERY BODY DIODE  
G
MAXIMUM RATINGS  
Symbol Parameter  
All Ratings: T = 25°C unless otherwise specified.  
C
APT60M80L2VFR  
UNIT  
VDSS  
ID  
Drain-Source Voltage  
600  
65  
Volts  
Continuous Drain Current @ TC = 25°C  
Amps  
Volts  
1
IDM  
Pulsed Drain Current  
260  
VGS  
VGSM  
Gate-Source Voltage Continuous  
Gate-Source Voltage Transient  
Total Power Dissipation @ TC = 25°C  
Linear Derating Factor  
±30  
±40  
Watts  
W/°C  
833  
PD  
6.67  
-55 to 150  
300  
TJ,TSTG  
TL  
Operating and Storage Junction Temperature Range  
°C  
Amps  
mJ  
Lead Temperature: 0.063" from Case for 10 Sec.  
1
IAR  
Avalanche Current  
(Repetitive and Non-Repetitive)  
65  
1
EAR  
EAS  
Repetitive Avalanche Energy  
Single Pulse Avalanche Energy  
50  
4
3200  
STATICELECTRICALCHARACTERISTICS  
Symbol Characteristic / Test Conditions  
MIN  
TYP  
MAX  
UNIT  
Volts  
Ohms  
BVDSS  
RDS(on)  
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)  
600  
2
Drain-Source On-State Resistance  
(VGS = 10V, ID = 32.5A)  
0.080  
250  
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)  
Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C)  
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)  
Gate Threshold Voltage (VDS = VGS, ID = 5mA)  
IDSS  
µA  
1000  
±100  
4
IGSS  
nA  
VGS(th)  
Volts  
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
APT Website - http://www.advancedpower.com  

APT60M80L2VFRG 替代型号

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APT60M80L2VFR MICROSEMI

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