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APT60S20B2CT PDF预览

APT60S20B2CT

更新时间: 2024-11-09 04:07:07
品牌 Logo 应用领域
美高森美 - MICROSEMI 整流二极管肖特基二极管高压超快软恢复二极管高压超快速软恢复二极管
页数 文件大小 规格书
4页 198K
描述
HIGH VOLTAGE SCHOTTKY DIODE

APT60S20B2CT 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:B2, T-MAX-3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.46Is Samacsys:N
其他特性:FREE WHEELING DIODE, HIGH RELIABILITY, SNUBBER DIODE, LOW NOISE, LOW LEAKAGE CURRENT应用:HIGH VOLTAGE ULTRA FAST SOFT RECOVERY
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.8 VJESD-30 代码:R-PSIP-T3
最大非重复峰值正向电流:600 A元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:75 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:200 V最大反向恢复时间:0.055 µs
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

APT60S20B2CT 数据手册

 浏览型号APT60S20B2CT的Datasheet PDF文件第2页浏览型号APT60S20B2CT的Datasheet PDF文件第3页浏览型号APT60S20B2CT的Datasheet PDF文件第4页 
1
3
T-Max  
2
1 - Anode 1  
2 - Common Cathode  
Back of Case -Cathode  
3 - Anode 2  
APT60S20B2CT 200V 2X75A  
1
3
2
HIGH VOLTAGE SCHOTTKY DIODE  
PRODUCT APPLICATIONS  
PRODUCT FEATURES  
PRODUCT BENEFITS  
Parallel Diode  
Ultrafast Recovery Times  
Low Losses  
-Switchmode Power Supply  
-Inverters  
Free Wheeling Diode  
-Motor Controllers  
-Converters  
Snubber Diode  
Soft Recovery Characteristics  
Popular T-MAX™ Package  
Low Forward Voltage  
Low Noise Switching  
Cooler Operation  
Higher Reliability Systems  
Uninterruptible Power Supply (UPS)  
48 Volt Output Rectifiers  
High Speed Rectifiers  
High Blocking Voltage  
Low Leakage Current  
Increased System Power  
Density  
MAXIMUM RATINGS  
All Ratings Are Per Leg: T = 25°C unless otherwise specified.  
C
Symbol Characteristic / Test Conditions  
APT60S20B2CT  
UNIT  
VR  
Maximum D.C. Reverse Voltage  
VRRM  
Maximum Peak Repetitive Reverse Voltage  
Maximum Working Peak Reverse Voltage  
Maximum Average Forward Current (TC = 123°C, Duty Cycle = 0.5)  
RMS Forward Current (Square wave, 50% duty)  
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)  
Operating and StorageTemperature Range  
Lead Temperature for 10 Sec.  
200  
Volts  
VRWM  
IF(AV)  
IF(RMS)  
IFSM  
75  
208  
Amps  
600  
TJ,TSTG  
-55 to 150  
300  
°C  
TL  
EVAL  
mJ  
Avalanche Energy (2A, 30mH)  
60  
STATIC ELECTRICAL CHARACTERISTICS  
Symbol  
MIN  
TYP  
.83  
.98  
.72  
MAX  
UNIT  
IF = 60A  
.90  
VF  
IF = 120A  
Forward Voltage  
Volts  
IF = 60A, TJ = 125°C  
VR = 200V  
1
IRM  
CT  
Maximum Reverse Leakage Current  
Junction Capacitance, VR = 200V  
mA  
pF  
VR = 200V, TJ = 125°C  
25  
300  
Microsemi Website - http://www.microsemi.com  

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