是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | TO-247 |
包装说明: | ROHS COMPLIANT PACKAGE-3 | 针数: | 3 |
Reach Compliance Code: | compliant | 风险等级: | 5.64 |
其他特性: | LOW CONDUCTION LOSS | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 117 A | 集电极-发射极最大电压: | 900 V |
配置: | SINGLE | JEDEC-95代码: | TO-247 |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e1 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | TIN SILVER COPPER | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 352 ns | 标称接通时间 (ton): | 44 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APT64GA90B2D30 | MICROSEMI |
获取价格 |
Power Semiconductors Power Modules | |
APT64GA90LD30 | MICROSEMI |
获取价格 |
High Speed PT IGBT | |
APT64GA90S | MICROSEMI |
获取价格 |
High Speed PT IGBT | |
APT65GL100BN | MICROSEMI |
获取价格 |
65A, 1000V, N-CHANNEL IGBT, TO-247 | |
APT65GP60B2 | ADPOW |
获取价格 |
POWER MOS 7 IGBT | |
APT65GP60B2 | MICROSEMI |
获取价格 |
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TMAX-3 | |
APT65GP60B2G | MICROSEMI |
获取价格 |
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TMAX-3 | |
APT65GP60J | ADPOW |
获取价格 |
POWER MOS 7 IGBT | |
APT65GP60JD2 | MICROSEMI |
获取价格 |
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, ISOTOP-4 | |
APT65GP60JDF2 | ADPOW |
获取价格 |
Insulated Gate Bipolar Transistor, 130A I(C), 600V V(BR)CES, N-Channel, ISOTOP-4 |