Datasheet > 晶体管 > IGBT> APT65GP60L2DF2

APT65GP60L2DF2

更新时间： 2024-02-09 16:37:54

品牌	Logo	应用领域
ADPOW		晶体晶体管功率控制瞄准线双极性晶体管
页数	文件大小	规格书
9页	201K
描述
POWER MOS 7 IGBT

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

APT65GP60L2DF2 技术参数

生命周期：	Active	零件包装代码：	TO-264MA
包装说明：	,	针数：	3
Reach Compliance Code：	compliant	风险等级：	5.58
Is Samacsys：	N	最大集电极电流 (IC)：	100 A
集电极-发射极最大电压：	600 V	门极发射器阈值电压最大值：	6 V
门极-发射极最大电压：	20 V	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	833 W
子类别：	Insulated Gate BIP Transistors	表面贴装：	NO
Base Number Matches：	1

APT65GP60L2DF2 数据手册

TYPICAL PERFORMANCE CURVES

APT65GP60L2DF2

600V

POWER MOS 7 IGBT

TO-264

Max

The POWER MOS 7^®IGBT is a new generation of high voltage power IGBTs.

Using Punch Through Technology this IGBT is ideal for many high frequency,

highvoltageswitchingapplicationsandhasbeenoptimizedforhighfrequency

switchmode power supplies.

• Low Conduction Loss

• Low Gate Charge

• 100 kHz operation @ 400V, 54A

• 50 kHz operation @ 400V, 76A

• SSOA rated

• Ultrafast Tail Current shutoff

MAXIMUM RATINGS

All Ratings: T = 25°C unless otherwise specified.

Parameter

UNIT

Symbol

V_CES

V_GE

APT65GP60L2DF2

Collector-Emitter Voltage

Gate-Emitter Voltage

600

±20

±30

Volts

V_GEM

I_C1

Gate-Emitter Voltage Transient

100

Continuous Collector Current @ T_C= 25°C

Amps

I_C2

Continuous Collector Current @ T_C= 110°C

I_CM

250

Pulsed Collector Current

@ T_C= 150°C

SSOA

P_D

Safe Switching Operating Area @ T_J= 150°C

250A@600V

833

Watts

°C

Total Power Dissipation

T_J,T_STG

T_L

-55 to 150

Operating and Storage Junction Temperature Range

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

300

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

600

TYP

MAX

UNIT

BV_CES

Collector-Emitter Breakdown Voltage (V_GE= 0V, I_C= 1250µA)

V_GE(TH)Gate Threshold Voltage (V_CE= V_GE, I_C= 2.5mA, T_j= 25°C)

Collector-Emitter On Voltage (V_GE= 15V, I_C= 65A, T_j= 25°C)

4.5

2.2

2.1

Volts

2.7

V_CE(ON)

Collector-Emitter On Voltage (V_GE= 15V, I_C= 65A, T_j= 125°C)

Collector Cut-off Current (V_CE= 600V, V_GE= 0V, T_j= 25°C)

1250

5500

±100

µA

I_CES

Collector Cut-off Current (V_CE= 600V, V_GE= 0V, T_j= 125°C)

Gate-Emitter Leakage Current (V_GE= ±20V)

I_GES

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

12 3 4 5 6 7...9

下载PDF

与APT65GP60L2DF2相关器件

型号	品牌	描述	获取价格	数据表
APT65GP60L2DQ2	ADPOW	POWER MOS 7 IGBT	获取价格
APT65GP60L2DQ2G	ADPOW	POWER MOS 7 IGBT	获取价格
APT66F60B2	MICROSEMI	N-Channel FREDFET	获取价格
APT66F60L	MICROSEMI	N-Channel FREDFET	获取价格
APT66M60B2	MICROSEMI	N-Channel MOSFET	获取价格
APT66M60B2_09	MICROSEMI	N-Channel MOSFET	获取价格