是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | TO-247 |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 0.89 | Is Samacsys: | N |
其他特性: | AVALANCHE RATED | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 100 A | 集电极-发射极最大电压: | 600 V |
配置: | SINGLE | JEDEC-95代码: | TO-247 |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e1 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | TIN SILVER COPPER | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 495 ns | 标称接通时间 (ton): | 84 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
APT50GF120B2RG | MICROSEMI |
类似代替 |
Power Semiconductors Power Modules | |
HGT1N30N60A4D | FAIRCHILD |
功能相似 |
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | |
IXGX120N60B | IXYS |
功能相似 |
HiPerFAST IGBT |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APT60GT60JR | ADPOW |
获取价格 |
The Thunderbolt IGBT⑩ is a new generation of | |
APT60GT60JRD | ADPOW |
获取价格 |
The Thunderbolt IGBT⑩ is a new generation of | |
APT60GT60JRDQ3 | ADPOW |
获取价格 |
Thunderbolt IGBT | |
APT60GT60SRG | MICROSEMI |
获取价格 |
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, D3 | |
APT60GU30B | ADPOW |
获取价格 |
POWER MOS 7 IGBT | |
APT60GU30B | MICROSEMI |
获取价格 |
Insulated Gate Bipolar Transistor, 100A I(C), 300V V(BR)CES, N-Channel, TO-247AD, TO-247, | |
APT60GU30BG | MICROSEMI |
获取价格 |
Insulated Gate Bipolar Transistor, 100A I(C), 300V V(BR)CES, N-Channel, TO-247AD, TO-247, | |
APT60GU30S | ADPOW |
获取价格 |
POWER MOS 7 IGBT | |
APT60GU30S | MICROSEMI |
获取价格 |
Insulated Gate Bipolar Transistor, 100A I(C), 300V V(BR)CES, N-Channel, D2PAK-3 | |
APT60GU30SG | MICROSEMI |
获取价格 |
Insulated Gate Bipolar Transistor, 100A I(C), 300V V(BR)CES, N-Channel, D2PAK-3 |