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APT60GT60SRG PDF预览

APT60GT60SRG

更新时间: 2024-11-11 20:10:59
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网功率控制晶体管
页数 文件大小 规格书
5页 195K
描述
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, D3PAK-3

APT60GT60SRG 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:D2PAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:compliant风险等级:5.62
其他特性:AVALANCHE RATED外壳连接:COLLECTOR
最大集电极电流 (IC):100 A集电极-发射极最大电压:600 V
配置:SINGLEJESD-30 代码:R-PSSO-G2
JESD-609代码:e1元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):245
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子面层:TIN SILVER COPPER
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):495 ns
标称接通时间 (ton):84 nsBase Number Matches:1

APT60GT60SRG 数据手册

 浏览型号APT60GT60SRG的Datasheet PDF文件第2页浏览型号APT60GT60SRG的Datasheet PDF文件第3页浏览型号APT60GT60SRG的Datasheet PDF文件第4页浏览型号APT60GT60SRG的Datasheet PDF文件第5页 
R  
APT60GT60BR  
APT60GT60SR  
600V  
®
(B)  
T
D3PAK  
O
Thunderbolt IGBT  
The Thunderbolt IGBT® is a new generation of high voltage power IGBTs.  
UsingNon-PunchThroughTechnologytheThunderboltIGBT® offerssuperior  
ruggedness and ultrafast switching speed.  
-
2
4
7
C
(S)  
C
G
E
G
C
E
• Low Forward Voltage Drop  
• Low Tail Current  
• High Freq. Switching to 150KHz  
• Ultra Low Leakage Current  
• RBSOA and SCSOA Rated  
G
• Avalanche Rated  
E
MAXIMUM RATINGS  
Symbol Parameter  
All Ratings: T = 25°C unless otherwise specified.  
C
UNIT  
APT60GT60BR_SR  
VCES  
Collector-Emitter Voltage  
600  
Volts  
600  
VCGR  
VGE  
IC1  
Collector-Gate Voltage (RGE = 20K)  
Gate Emitter Voltage  
±20  
100  
4
Continuous Collector Current @ TC = 25°C  
IC2  
Continuous Collector Current @ TC = 105°C  
60  
Amps  
1
ICM  
Pulsed Collector Current  
@ TC = 25°C  
360  
ILM  
RBSOA Clamped Inductive Load Current RG = 11TC = 25°C  
360  
65  
2
EAS  
PD  
mJ  
Single Pule Avalanche Energy  
500  
Watts  
°C  
Total Power Dissipation  
TJ,TSTG  
TL  
Operating and Storage Junction Temperature Range  
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.  
-55 to 150  
300  
STATIC ELECTRICAL CHARACTERISTICS  
Symbol  
Characteristic / Test Conditions  
UNIT  
MIN  
600  
3
TYP  
MAX  
BVCES  
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 0.5mA)  
VGE(TH) Gate Threshold Voltage (VCE = VGE, IC = 500µA, Tj = 25°C)  
4
5
Volts  
Collector-Emitter On Voltage (VGE = 15V, IC = IC2, Tj = 25°C)  
VCE(ON)  
1.6  
2.2  
2.5  
Collector-Emitter On Voltage (VGE = 15V, IC = IC2, Tj = 125°C)  
2.8  
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)  
ICES  
80  
µA  
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)  
2000  
±100  
nA  
IGES  
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)  
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
APT Website - http://www.advancedpower.com  

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