是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | D2PAK |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 3 |
Reach Compliance Code: | compliant | 风险等级: | 5.62 |
其他特性: | AVALANCHE RATED | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 100 A | 集电极-发射极最大电压: | 600 V |
配置: | SINGLE | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e1 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 245 |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN SILVER COPPER |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 495 ns |
标称接通时间 (ton): | 84 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APT60GU30B | ADPOW |
获取价格 |
POWER MOS 7 IGBT | |
APT60GU30B | MICROSEMI |
获取价格 |
Insulated Gate Bipolar Transistor, 100A I(C), 300V V(BR)CES, N-Channel, TO-247AD, TO-247, | |
APT60GU30BG | MICROSEMI |
获取价格 |
Insulated Gate Bipolar Transistor, 100A I(C), 300V V(BR)CES, N-Channel, TO-247AD, TO-247, | |
APT60GU30S | ADPOW |
获取价格 |
POWER MOS 7 IGBT | |
APT60GU30S | MICROSEMI |
获取价格 |
Insulated Gate Bipolar Transistor, 100A I(C), 300V V(BR)CES, N-Channel, D2PAK-3 | |
APT60GU30SG | MICROSEMI |
获取价格 |
Insulated Gate Bipolar Transistor, 100A I(C), 300V V(BR)CES, N-Channel, D2PAK-3 | |
APT60M60JFLL | ADPOW |
获取价格 |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po | |
APT60M60JFLL_03 | ADPOW |
获取价格 |
POWER MOS 7 R FREDFET | |
APT60M60JLL | ADPOW |
获取价格 |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po | |
APT60M60JLL_03 | ADPOW |
获取价格 |
POWER MOS 7 R MOSFET |