APT60M75PVR

更新时间： 2024-01-04 17:54:06

品牌	Logo	应用领域
ADPOW		晶体晶体管功率场效应晶体管开关脉冲高压局域网
页数	文件大小	规格书
2页	40K
描述
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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技术参数
数据手册

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APT60M75PVR 技术参数

生命周期：	Active	包装说明：	,
针数：	4	Reach Compliance Code：	compliant
风险等级：	5.69	Is Samacsys：	N
最大漏极电流 (Abs) (ID)：	60.5 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
元件数量：	1	最高工作温度：	150 °C
最大功率耗散 (Abs)：	625 W	子类别：	FET General Purpose Power
Base Number Matches：	1

APT60M75PVR 数据手册

APT60M75PVR

600V 60.5A 0.075Ω

POWER MOS V^®

Power MOS V^®is a new generation of high voltage N-Channel enhancement

mode power MOSFETs. This new technology minimizes the JFET effect,

increases packing density and reduces the on-resistance. Power MOS V^®also

achieves faster switching speeds through optimized gate layout.

P-Pack

• Faster Switching

• Lower Leakage

• 100% Avalanche Tested

• New High Power P-Pack Package

MAXIMUM RATINGS

Symbol Parameter

All Ratings: T = 25°C unless otherwise specified.

APT60M75PVR

UNIT

V_DSS

I_D

Drain-Source Voltage

600

Volts

Continuous Drain Current @ T_C= 25°C

60.5

Amps

Volts

I_DM

Pulsed Drain Current

242

±30

±40

625

5.0

V_GS

V_GSM

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T_C= 25°C

Linear Derating Factor

Watts

P_D

W/°C

T_J,T_STG

T_L

Operating and Storage Junction Temperature Range

-55 to 150

300

°C

Amps

Lead Temperature: 0.063" from Case for 10 Sec.

I_AR

Avalanche Current

(Repetitive and Non-Repetitive)

60.5

E_AR

E_AS

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

3600

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

PRELIMINAR

BV_DSS

I_D(on)

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250µA)

Volts

600

On State Drain Current

(V_DS> I_D(on)x R_DS(on)Max, V_GS= 10V)

Amps

60.5

R_DS(on)

Drain-Source On-State Resistance

(V_GS= 10V, 0.5 I_D[Cont.])

Ohms

0.075

100

500

±100

Zero Gate Voltage Drain Current (V_DS= V_DSS, V_GS= 0V)

I_DSS

µA

Zero Gate Voltage Drain Current (V_DS= 0.8 V_DSS, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Gate Threshold Voltage (V_DS= V_GS, I_D= 5mA)

I_GSS

V_GS(th)

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

USA

405 S.W. Columbia Street

EUROPE

Bend, Oregon 97702-1035

F-33700 Merignac - France

Phone: (541) 382-8028

Phone: (33) 5 57 92 15 15

FAX: (541) 388-0364

FAX: (33) 5 56 47 97 61

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord

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