是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | unknown |
风险等级: | 5.73 | Is Samacsys: | N |
雪崩能效等级(Eas): | 3200 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 600 V |
最大漏极电流 (ID): | 73 A | 最大漏源导通电阻: | 0.075 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 292 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APT60M75L2FLL_04 | ADPOW |
获取价格 |
POWER MOS 7 R FREDFET | |
APT60M75L2FLLG | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 73A I(D), 600V, 0.075ohm, 1-Element, N-Channel, Silicon, Me | |
APT60M75L2LL | ADPOW |
获取价格 |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po | |
APT60M75L2LL_04 | ADPOW |
获取价格 |
POWER MOS 7 R MOSFET | |
APT60M75PVR | ADPOW |
获取价格 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | |
APT60M80JVR | ADPOW |
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POWER MOS V | |
APT60M80L2VFR | ADPOW |
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POWER MOS V FREDFET | |
APT60M80L2VFR | MICROSEMI |
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Power Field-Effect Transistor, 65A I(D), 600V, 0.08ohm, 1-Element, N-Channel, Silicon, Met | |
APT60M80L2VFRG | MICROSEMI |
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Power Field-Effect Transistor, 65A I(D), 600V, 0.08ohm, 1-Element, N-Channel, Silicon, Met | |
APT60M80L2VR | ADPOW |
获取价格 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |