APT60M75JVR

更新时间： 2024-11-04 22:50:11

品牌	Logo	应用领域
ADPOW		晶体晶体管开关脉冲高压局域网
页数	文件大小	规格书
4页	77K
描述
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

APT60M75JVR 数据手册

APT60M75JVR

600V 62A 0.075Ω

POWER MOS V^®

Power MOS V^®is a new generation of high voltage N-Channel enhancement

mode power MOSFETs. This new technology minimizes the JFET effect,

increases packing density and reduces the on-resistance. Power MOS V^®

also achieves faster switching speeds through optimized gate layout.

SOT-227

"UL Recognized"

ISOTOP^®

• Faster Switching

• Lower Leakage

• 100% Avalanche Tested

• Popular SOT-227 Package

MAXIMUM RATINGS

Symbol Parameter

All Ratings: T = 25°C unless otherwise specified.

APT60M75JVR

UNIT

V_DSS

I_D

Drain-Source Voltage

600

Volts

Continuous Drain Current @ T_C= 25°C

Amps

Volts

I_DM

Pulsed Drain Current

248

V_GS

V_GSM

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

±30

±40

Total Power Dissipation @ T_C= 25°C

Linear Derating Factor

Watts

700

P_D

5.6

W/°C

T_J,T_STG

T_L

Operating and Storage Junction Temperature Range

-55 to 150

300

°C

Amps

Lead Temperature: 0.063" from Case for 10 Sec.

I_AR

Avalanche Current

(Repetitive and Non-Repetitive)

E_AR

E_AS

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

3600

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

BV_DSS

I_D(on)

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250µA)

Volts

600

On State Drain Current

(V_DS> I_D(on)x R_DS(on)Max, V_GS= 10V)

Amps

R_DS(on)

Drain-Source On-State Resistance

(V_GS= 10V, 0.5 I_D[Cont.])

Ohms

0.075

100

500

±100

Zero Gate Voltage Drain Current (V_DS= V_DSS, V_GS= 0V)

I_DSS

µA

Zero Gate Voltage Drain Current (V_DS= 0.8 V_DSS, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Gate Threshold Voltage (V_DS= V_GS, I_D= 5mA)

I_GSS

V_GS(th)

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

USA

405 S.W. Columbia Street

EUROPE

Bend, Oregon 97702-1035

F-33700 Merignac - France

Phone: (541) 382-8028

Phone: (33) 5 57 92 15 15

FAX: (541) 388-0364

FAX: (33) 5 56 47 97 61

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord

12 3 4

中文翻译

下载PDF

与APT60M75JVR相关器件

型号	品牌	获取价格	描述	数据表
APT60M75L2FLL	ADPOW	获取价格	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po
APT60M75L2FLL_04	ADPOW	获取价格	POWER MOS 7 R FREDFET
APT60M75L2FLLG	MICROSEMI	获取价格	Power Field-Effect Transistor, 73A I(D), 600V, 0.075ohm, 1-Element, N-Channel, Silicon, Me
APT60M75L2LL	ADPOW	获取价格	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po
APT60M75L2LL_04	ADPOW	获取价格	POWER MOS 7 R MOSFET
APT60M75PVR	ADPOW	获取价格	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT60M80JVR	ADPOW	获取价格	POWER MOS V
APT60M80L2VFR	ADPOW	获取价格	POWER MOS V FREDFET
APT60M80L2VFR	MICROSEMI	获取价格	Power Field-Effect Transistor, 65A I(D), 600V, 0.08ohm, 1-Element, N-Channel, Silicon, Met
APT60M80L2VFRG	MICROSEMI	获取价格	Power Field-Effect Transistor, 65A I(D), 600V, 0.08ohm, 1-Element, N-Channel, Silicon, Met

与APT60M75JVR相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

14
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

12
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

36
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

31

产品中心

服务支持

精选活动

关于我们

帮助中心

APT60M75JVR

APT60M75JVR 数据手册

与APT60M75JVR相关器件

与APT60M75JVR相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

APT60M75JVR

APT60M75JVR 数据手册

与APT60M75JVR相关器件

与APT60M75JVR相关文章

您还可以找

您在本页遇到什么问题？