APT15F50K_KF
500V, 15A, 0.39Ω Max, t ≤190ns
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APT15F50KF
N-Channel FREDFET
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
high reliability in ZVS phase shifted bridge and other circuits through reduced t , soft
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recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly
reduced ratio of C /C result in excellent noise immunity and low switching loss. The
rss iss
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching
at very high frequency.
D
APT15F50K
G
S
Single die FREDFET
FEATURES
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge
• Fast switching with low EMI
• Half bridge
• Low t for high reliability
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• PFC and other boost converter
• Buck converter
• Ultra low C
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for improved noise immunity
• Low gate charge
• Single and two switch forward
• Flyback
• Avalanche energy rated
• RoHS compliant
Absolute Maximum Ratings
Symbol Parameter
15F50K
15F50KF
6.2
Unit
Continuous Collector Current @ TC = 25°C
15
10
45
ID
Continuous Collector Current @ TC = 100°C
Pulsed Drain Current 1
3.9
A
IDM
VGS
EAS
IAR
18.6
Gate-Source Voltage 2
±30
305
7
V
mJ
A
Single Pulse Avalanche Energy 2
Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Parameter
Min
Typ
Max
223
37
Unit
W
Power Dissipation (TC = 25°C) [K]
PD
Power Dissipation (TC = 25°C) [KF]
Junction to Case Thermal Resistance [K]
Junction to Case Thermal Resistance [KF]
0.56
RθJC
RθJC
°C/W
°C
3.3
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
Soldering Temperature for 10 Seconds (1.6mm from case)
0.11
RθCS
TJ,TSTG
TL
-55
150
300
0.07
1.2
oz
g
Package Weight
WT
10
in·lbf
N·m
Torque
Mounting Torque ( TO-220 Package), 4-40 or M3 screw
1.1
Microsemi Website - http://www.microsemi.com