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APT15GN120BDQ1G

更新时间： 2024-11-25 06:37:27

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管功率控制双极性晶体管局域网
页数	文件大小	规格书
9页	165K
描述
High Speed PT IGBT

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中文翻译

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数据手册

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APT15GN120BDQ1G 数据手册

TYPICAL PERFORMANCE CURVES

APT15GN120BD_SDQ1(G)

APT15GN120BDQ1

APT15GN120SDQ1

APT15GN120BDQ1(G) APT15GN120SDQ1(G)

1200V

*G Denotes RoHS Compliant, Pb Free Terminal Finish.

Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra

low V_CE(ON)and are ideal for low frequency applications that require absolute minimum

conduction loss. Easy paralleling is a result of very tight parameter distribution and a

slightly positive V_CE(ON)temperature coefﬁcient. Low gate charge simpliﬁes gate drive

design and minimizes losses.

(B)

D³PAK

(S)

• 1200V Field Stop

• Trench Gate: Low V_CE(on)

• Easy Paralleling

Applications:Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS

MAXIMUM RATINGS

All Ratings: T = 25°C unless otherwise speciﬁed.

Parameter

Symbol

UNIT

APT15GN120BD_SDQ1(G)

V_CES

Collector-Emitter Voltage

1200

Volts

V_GE

I_C1

Gate-Emitter Voltage

±±0

Continuous Collector Current @ T_C= 25°C

Continuous Collector Current @ T_C= 110°C

I_C2

Amps

Pulsed Collector Current

I_CM

Switching Safe Operating Area @ T_J= 150°C

45A @ 1200V

195

SSOA

P_D

Total Power Dissipation

Watts

°C

T_J,T_STG

Operating and Storage Junction Temperature Range

-55 to 150

±00

T_L

Max. Lead Temp. for Soldering: 0.06±" from Case for 10 Sec.

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

1200

5.0

TYP

MAX

Units

V_(BR)CES

V_GE(TH)

Collector-Emitter Breakdown Voltage (V_GE= 0V, I_C= 0.5mA)

Gate Threshold Voltage (V_CE= V_GE, I_C= 600µA, T_j= 25°C)

Collector-Emitter On Voltage (V_GE= 15V, I_C= 15A, T_j= 25°C)

Collector-Emitter On Voltage (V_GE= 15V, I_C= 15A, T_j= 125°C)

5.8

1.7

2.0

6.5

2.1

Volts

1.4

V_CE(ON)

Collector Cut-off Current (V_CE= 1200V, V_GE= 0V, T_j= 25°C)

200

I_CES

µA

Collector Cut-off Current (V_CE= 1200V, V_GE= 0V, T_j= 125°C)

Gate-Emitter Leakage Current (V_GE= ±20V)

Intergrated Gate Resistor

TBD

120

I_GES

R_GINT

N/A

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Microsemi Website - http://www.microsemi.com

12 3 4 5 6 7...9

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