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APT15GN120BDQ1

更新时间： 2024-11-25 03:21:35

品牌	Logo	应用领域
ADPOW		晶体整流二极管晶体管功率控制栅局域网软恢复二极管快速软恢复二极管
页数	文件大小	规格书
9页	229K
描述
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE

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中文翻译

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数据手册

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APT15GN120BDQ1 数据手册

TYPICAL PERFORMANCE CURVES

^AP1^T2¹⁵0^G0^NV^120BDQ1(G)

APT15GN120BDQ1

APT15GN120BDQ1G*

*G Denotes RoHS Compliant, Pb Free Terminal Finish.

Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra

low V_CE(ON)and are ideal for low frequency applications that require absolute minimum

conduction loss. Easy paralleling is a result of very tight parameter distribution and a

slightly positive V_CE(ON)temperature coefﬁcient. Low gate charge simpliﬁes gate drive

design and minimizes losses.

• 1200V Field Stop

• Trench Gate: Low V_CE(on)

• Easy Paralleling

Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS

MAXIMUM RATINGS

All Ratings: T = 25°C unless otherwise speciﬁed.

Parameter

Symbol

APT15GN120BDQ1(G)

UNIT

V_CES

Collector-Emitter Voltage

1200

Volts

V_GE

I_C1

Gate-Emitter Voltage

±30

Continuous Collector Current @ T_C= 25°C

Continuous Collector Current @ T_C= 110°C

I_C2

Amps

Pulsed Collector Current

I_CM

Switching Safe Operating Area @ T_J= 150°C

45A @ 1200V

195

SSOA

P_D

Total Power Dissipation

Watts

°C

T_J,T_STG

Operating and Storage Junction Temperature Range

-55 to 150

300

T_L

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

1200

5.0

TYP

MAX

Units

V_(BR)CES

V_GE(TH)

Collector-Emitter Breakdown Voltage (V_GE= 0V, I_C= 0.5mA)

Gate Threshold Voltage (V_CE= V_GE, I_C= 600µA, T_j= 25°C)

Collector-Emitter On Voltage (V_GE= 15V, I_C= 15A, T_j= 25°C)

Collector-Emitter On Voltage (V_GE= 15V, I_C= 15A, T_j= 125°C)

5.8

1.7

2.0

6.5

2.1

Volts

1.4

V_CE(ON)

Collector Cut-off Current (V_CE= 1200V, V_GE= 0V, T_j= 25°C)

200

I_CES

µA

Collector Cut-off Current (V_CE= 1200V, V_GE= 0V, T_j= 125°C)

Gate-Emitter Leakage Current (V_GE= ±20V)

Intergrated Gate Resistor

TBD

120

I_GES

R_GINT

Ω

N/A

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

12 3 4 5 6 7...9

中文翻译

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