Datasheet > AP9926EO

AP9926EO

更新时间： 2024-10-27 21:55:23

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其他 - ETC		/
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描述
Power MOSFETs from APEC provide the designer with the best combination of fast switching

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AP9926EO 数据手册

AP9926EO

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Low on-resistance

BV_DSS

R_DS(ON)

I_D

20V

28mΩ

4.6A

▼ Capable of 2.5V gate drive

▼ Low drive current

TSSOP-8

▼ Surface mount package

Description

The Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, ultra low on-resistance and

cost-effectiveness.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

± 12

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

4.6

3.7

P_D@T_A=25℃

Total Power Dissipation

Linear Derating Factor

Storage Temperature Range

0.008

-55 to 150

W/℃

℃

T_STG

T_J

Operating Junction Temperature Range

Thermal Data

Symbol

Parameter

Value

125

Unit

Rthj-amb

Thermal Resistance Junction-ambient³

Max.

℃/W

Data and specifications subject to change without notice

20112502

12 3 4 5 6

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