Datasheet > AP9938GEM-HF

AP9938GEM-HF

更新时间： 2024-10-28 12:51:59

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
4页	73K
描述
DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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中文翻译

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AP9938GEM-HF 数据手册

AP9938GEM-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

DUAL N-CHANNEL ENHANCEMENT

MODE POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

20V

18mΩ

8.5A

▼ Low On-resistance

▼ Fast Switching Performance

▼ RoHS Compliant & Halogen-Free

SO-8

Description

AP9938 series are from Advanced Power innovated design and

silicon process technology to achieve the lowest possible on-

resistance and fast switching performance. It provides the

designer with an extreme efficient device for use in a wide range

of power applications

The SO-8 package is widely preferred for all commercial-industrial

surface mount applications and suited for low voltage applications

such as DC/DC converters.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

8.5

6.8

P_D@T_A=25℃

T_STG

Total Power Dissipation

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

62.5

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient³

℃/W

Data and specifications subject to change without notice

201304231

12 3 4

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