AP9930M

更新时间： 2024-10-28 08:32:11

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
7页	99K
描述
2N AND 2P-CHANNEL ENHANCEMENT

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AP9930M 数据手册

AP9930M

Advanced Power

Electronics Corp.

2N AND 2P-CHANNEL ENHANCEMENT

MODE POWER MOSFET

P2G

N2D/P2D

P1S/P2S

P1G

▼ Simple Drive Requirement

N-CH BV_DSS

30V

33mΩ

6.3A

▼ Low On-resistance

R_DS(ON)

▼ Full Bridge Application on

LCD Monitor Inverter

I_D

P-CH BV_DSS

R_DS(ON)

N2G

N1S/N2S

-30V

N1D/P1D

N1G

SO-8

55mΩ

-5.1A

Description

I_D

The Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-

effectiveness.

P1S

P2S

P1G

P2G

P2N2D

P1N1D

The SO-8 package is universally preferred for all commercial-

industrial surface mount applications and suited for low voltage

applications such as DC/DC converters.

N2G

N1G

N2S

N1S

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

N-channel

P-channel

V_DS

V_GS

Drain-Source Voltage

± 25

6.3

4.2

-30

±25

-5.1

-3.4

-20

Gate-Source Voltage

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

P_D@T_A=25℃

Total Power Dissipation

Linear Derating Factor

2.0

0.016

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

62.5

Unit

Rthj-amb

Thermal Resistance Junction-ambient³

Max.

℃/W

Data and specifications subject to change without notice

200612032

12 3 4 5 6 7

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