Datasheet > AP9936M

AP9936M

更新时间： 2024-10-27 21:55:39

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描述
N CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP9936M 数据手册

AP9936M

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ DC-DC Application

BV_DSS

R_DS(ON)

I_D

30V

50mΩ

▼ Dual N-channel Device

▼ Surface Mount Package

SO-8

Description

The Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, ultra low on-resistance and

cost-effectiveness.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

± 20

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

P_D@T_A=25℃

Total Power Dissipation

Linear Derating Factor

0.016

-55 to 150

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

Thermal Data

Symbol

Parameter

Value

62.5

Unit

Rthj-amb

Thermal Resistance Junction-ambient³

Max.

℃/W

Data and specifications subject to change without notice

20102202

12 3 4 5 6

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与AP9936M相关器件

型号	品牌	获取价格	描述	数据表
AP9938AGEY	A-POWER	获取价格	2928-8
AP9938AGEY-HF	A-POWER	获取价格	Capable of 2.5V Gate Drive, Low On-resistance, Surface Mount Package
AP9938GEM	A-POWER	获取价格	SO-8
AP9938GEM-HF	A-POWER	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9938GEO-HF	A-POWER	获取价格	Capable of 1.8V Gate Drive, Optimal DC/DC Battery Application
AP9938GEY	A-POWER	获取价格	2928-8
AP9938GEY-HF	A-POWER	获取价格	Capable of 1.8V Gate Drive, Lower on-resistance, Surface Mount Package
AP9950AGH	A-POWER	获取价格	TO-252
AP9950AGH-HF	A-POWER	获取价格	TRANSISTOR 60 A, 70 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND R
AP9950AGP	A-POWER	获取价格	TO-220