AP9962AGM

更新时间： 2024-09-13 12:52:11

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
5页	208K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP9962AGM 数据手册

AP9962AGM

RoHS-compliant Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Low On-resistance

BV_DSS

R_DS(ON)

I_D

40V

25mΩ

▼ Single Drive Requirement

▼ Surface Mount Package

SO-8

Description

Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, ultra low on-resistance and

cost-effectiveness.

The SO-8 package is widely preferred for commercial-

industrial surface mount applications and suited for low

voltage applications such as DC/DC converters.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

± 20

Continuous Drain Current³, V_GS@ 10V

Pulsed Drain Current¹

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

5.5

P_D@T_A=25℃

Total Power Dissipation

Linear Derating Factor

0.016

-55 to 150

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

℃

Thermal Data

Symbol

Parameter

Value

62.5

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient³

℃/W

Data and specifications subject to change without notice

200810282

12 3 4 5

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